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    Yb/WO3/Ga2S3/Au multifunctional electronic hybrid devices fabricated as tunneling diodes, MOSFETS, microwave resonators and 5G band pass/reject filters
    (Forum of Chalcogeniders, 2022) Qasrawi, Atef Fayez; Abu Alrub, S. N.
    Herein, Tungsten trioxide-gallium sulfide heterojunctions which are prepared by the thermal evaporation technique under a vacuum pressure of 10-5 mbar are employed as active media to fabricate a multifunctional device. The WO3/Ga2S3 (WG) heterojunctions which are deposited onto Yb substrates and top contacted with Au pads of areas of 1.5× 10 ?2 cm2 displayed electronic hybrid device structure composed of two Schottky arms connected to a pn junction. The constructed Yb/WG/Au devices showed tunneling diode characteristics with current conduction dominated by thermionic emission and quantum mechanical tunneling. In additions, the capacitance-voltage characteristic curves indicated the formation of PMOS and NMOS under reverse and forwards biasing conditions demonstrating a metal oxide semiconductor fields effect (MOSFET) transistor characteristics. Moreover, the impedance spectroscopy tests on the devices have shown that the device can perform as tunable microwave resonator suitable for 5G technologies. The resonator showed frequency based capacitance tunability and displayed microwave band pass/reject filter characteristics. The microwave cutoff frequency of the Yb/WG/Au band filters reaches 9.65 GHz with voltage standing wave ratios of 1.06 and return loss factor of ~29 dB.
  • Küçük Resim Yok
    Öğe
    Yb/WO3/Ga2S3/Au multifunctional electronic hybrid devices fabricated as tunneling diodes, MOSFETS, microwave resonators and 5G band pass/reject filters
    (Virtual Co Physics Srl, 2022) Qasrawi, A. F.; Abu Alrub, S. N.
    Herein, Tungsten trioxide-gallium sulfide heterojunctions which are prepared by the thermal evaporation technique under a vacuum pressure of 10(-5) mbar are employed as active media to fabricate a multifunctional device. The WO3/Ga2S3 (WG) heterojunctions which are deposited onto Yb substrates and top contacted with Au pads of areas of 1.5x 10(-2) cm(2) displayed electronic hybrid device structure composed of two Schottky arms connected to a pn junction. The constructed Yb/WG/Au devices showed tunneling diode characteristics with current conduction dominated by thermionic emission and quantum mechanical tunneling. In additions, the capacitance-voltage characteristic curves indicated the formation of PMOS and NMOS under reverse and forwards biasing conditions demonstrating a metal oxide semiconductor fields effect (MOSFET) transistor characteristics. Moreover, the impedance spectroscopy tests on the devices have shown that the device can perform as tunable microwave resonator suitable for 5G technologies. The resonator showed frequency based capacitance tunability and displayed microwave band pass/reject filter characteristics. The microwave cutoff frequency of the Yb/WG/Au band filters reaches 9.65 GHz with voltage standing wave ratios of 1.06 and return loss factor of similar to 29 dB.