Characterization and high-frequency applications of barium antimonide thin films for voltage-controlled negative capacitance and 6G technology

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dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.date.accessioned2025-04-18T06:33:01Z
dc.date.available2025-04-18T06:33:01Z
dc.date.issued2024
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractHerein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under a vacuum pressure of 10-5 mbar. BaSb films exhibit orthorhombic lattice. Over a wide range of scans, the films are mostly stoichiometric, displaying atomic contents of 50.17 and 49.83 at% for Ba and Sb, respectively. Morphological analyses of these films show the growth of large grains with sizes ranging from 1.64 to 4.14 mu m. Dynamic electrical measurements on Ag/BaSb/Ag films are conducted in the frequency domain of 0.01-1.80 GHz. The films display features of voltage-controlled negative capacitance source (VCNC) and resonance-antiresonance peaks at a critical frequency of 1.64 GHz. Lorentz models spectral analyses on these peaks indicate that they correspond to a high-frequency capacitance value of 2.8 nF, a density of oscillators of 4 x 1010 cm-3, and a scattering time constant of tau = 100 ns. Additionally, Ag/BaSb/Ag films show a wide variety in the cutoff frequency spectra, making them suitable for high-frequency applications. The cutoff frequency varies from 2.6 GHz to 1.0 THz as driving frequency increases from 1.0 to 1.64 GHz. The features of VCNC sources, resonance-antiresonance behavior, and high cutoff frequency make BaSb thin films promising for thin-film transistors and 6 G technology applications. BaSb films, fabricated by thermal deposition under 10-5 mbar vacuum, show an orthorhombic lattice and stoichiometric composition (50.17% Ba, 49.83% Sb). They exhibit large grains (1.64-4.14 mu m), voltage-controlled negative capacitance, resonance peaks at 1.64 GHz, and high-frequency applications up to 1.0 THz, making them suitable for 6G technology.image (c) 2024 WILEY-VCH GmbH
dc.description.sponsorshipArab American University Istinye University
dc.identifier.citationQasrawi, A. F. (2024). Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology. physica status solidi (a), 221(20), 2400449.
dc.identifier.doi10.1002/pssa.202400449
dc.identifier.issn1862-6300
dc.identifier.issn1862-6319
dc.identifier.issue20
dc.identifier.scopus2-s2.0-85200152126
dc.identifier.scopusqualityQ2
dc.identifier.urihttp://dx.doi.org/10.1002/pssa.202400449
dc.identifier.urihttps://hdl.handle.net/20.500.12713/6338
dc.identifier.volume221
dc.identifier.wosWOS:001281964000001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorQasrawi, Atef Fayez
dc.institutionauthoridAtef Fayez Qasrawi / 0000-0001-8193-6975
dc.language.isoen
dc.publisherWiley
dc.relation.ispartofPhysica status solidi a-applications and materials science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subject6G Technologies
dc.subjectBaSb Thin Films
dc.subjectNegative Capacitance Sources
dc.subjectOrthorhombic Terahertz
dc.titleCharacterization and high-frequency applications of barium antimonide thin films for voltage-controlled negative capacitance and 6G technology
dc.typeArticle

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