Effects of ZnPc substrates on the electro‑optical properties of MgSe thin films and the applications of Al/ZnPc/MgSe/ (Ag, C, Au) hybrid devices as resonant negative capacitance sources
Yükleniyor...
Tarih
11/07/2024
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Optical and Quantum Eletronics, Springer link
Erişim Hakkı
info:eu-repo/semantics/embargoedAccess
Özet
Herein, polycrystalline magnesium selenide (MgSe) thin films are deposited onto glass and
monoclinic-structured zinc phthalocyanine (ZnPc) thin film substrates under high vacuum
pressure using the thermal evaporation technique. ZnPc substrates improved the crystallinity
of the MgSe films and decreased the stacking faults percentages and defect concentration
by 31.57 and 52.49%, respectively. MgSe films deposited onto ZnPc substrates exhibited
a notable increase of up to 32% in light absorption within the visible spectrum, while
maintaining the energy band gap value of MgSe without significant alteration. In addition,
as both the substrate and the epilayer exhibited p-type conductivity, an isotype heterojunction
device structure is formed at the ZnPc/MgSe interfaces. The valence and conduction
band offsets for this interface are 0.81 and 1.16 eV, respectively. On the other hand, re-fabrication
of the ZnPc/MgSe heterojunctions onto Al thin film substrates and forming three
Ag/MgSe, C/MgSe, and Au/MgSe Schottky channels on the epilayer surface allowed wide
control of the negative capacitance effect and the resonance-antiresonance (RA) peaks
in the capacitance spectra of the Al/ZnPc/MgSe/(Ag, C, Au) hybrid devices. These two
important RA and NC features of the device can also be engineered by altering the DC
biasing of the device. Moreover, Lorentz model analyses on the capacitance spectra showed
an increased density of oscillators and increased scattering time constant with decreasing
built-in potential at the metal/MgSe interfaces. The features of the hybrid devices presented
make the device promising for microwave and electro-optical applications
Açıklama
Anahtar Kelimeler
ZnPC/MgSe · High absorbance · Isotype heterojunctions · Microwave · Negative capacitance
Kaynak
WoS Q Değeri
Scopus Q Değeri
Cilt
Sayı
56
