n-Si/p-BaO/p-SiO2 Heterojunctions Designed as Negative Capacitance and Negative Conductance Sources, 6G Technology Frequency Stabilizers, and Current Rectifiers

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dc.authorid0000-0001-8193-6975
dc.authorscopusid6603962677
dc.authorwosidR-4409-2019
dc.contributor.authorQAsrawi Atef Fayez
dc.contributor.authorM. Y. Al-Harbi
dc.contributor.authorSeham Alharbi
dc.date.accessioned2025-04-18T10:02:04Z
dc.date.available2025-04-18T10:02:04Z
dc.date.issued12.02.2025
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractBarium oxide thin films were deposited on n-type Si wafers and coated with silicon oxide nanosheets to develop multifunctional electronic devices. Two channels, n-Si/p-BaO (SB) and n-Si/p-BaO/p-SiO₂ (SBS), were fabricated under high vacuum (10⁻⁵ mbar). The SB channel served as a microwave resonator and a negative capacitance (NC) source, while the SBS channel exhibited suppressed NC and a negative conductance (NG) effect. NC and NG effects dominate in the frequency ranges of 1.18-1.80 GHz and 1.16-.80 GHz, respectively. Both channels demonstrated high cutoff frequencies exceeding 200 GHz, making them effective as 6G band filters and high-frequency stabilizers. Additionally, the current-voltage characteristics revealed strong temperature dependent asymmetry, with ratios of 52 and 132 at 5.0 V for SB and SBS, respectively, enabling their use as electronic switches and current rectifiers even at 433 K. These devices combine NC and NG features, high-frequency stabilization, and current rectification, showcasing their potential for advanced multifunctional applications.
dc.identifier.doihttps://iopscience.iop.org/article/10.1088/1402-4896/adb345
dc.identifier.issn0031-8949
dc.identifier.urihttps://hdl.handle.net/20.500.12713/6925
dc.institutionauthorQasrawi , Atef Fayez
dc.institutionauthorid0000-0001-8193-6975
dc.language.isoen
dc.publisherPhysica Scripta (IOP)
dc.relation.ispartofphysica scripta
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.subjectSi/BaO interfaces
dc.subjectnegative capacitance
dc.subjectnegative conductance
dc.subject6G technology
dc.subjectrectifiers
dc.titlen-Si/p-BaO/p-SiO2 Heterojunctions Designed as Negative Capacitance and Negative Conductance Sources, 6G Technology Frequency Stabilizers, and Current Rectifiers
dc.typeArticle

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