Alfhaid, Latifah Hamad KhalidQasrawi, Atef FayezAljaloud, Amjad Salamah M.2025-04-182025-04-182024Alfhaid, L. H. K., Qasrawi, A. F., & Aljaloud, A. S. M. (2024). In/Nb2O5 interfaces designed as enhanced broadband light absorbers, terahertz optical filters and quad band antennas. Journal of Materials Research, 39(18), 2601-2611.08842914http://dx.doi.org/10.1557/s43578-024-01410-9https://hdl.handle.net/20.500.12713/7103Herein, thin films of Nb2O5 are deposited onto semitransparent indium and glass substrates using the sputtering technique. Optical analyses revealed significant improvement in light absorption, displaying a maximum enhancement of 1900% at an incident photon energy of 2.29 eV. The dielectric constant of Nb2O5 is increased by 289% after coating onto indium substrates. In addition it increased the values of terahertz cutoff frequency making the In/Nb2O5 interfaces promising for use as optical band filters adequate for terahertz technology. On the other hand the experimentally designed In/Nb2O5/Ag antennas were tested in the frequency domain of 0.01–1.80 GHz. The antennas exhibited excellent performance across the quad-band range. The four lower bandstop edges of the AC transmission line are centered at 0.67 GHz, 1.19 GHz, 1.42 GHz, and 1.65 GHz. Additionally, the MIM antenna demonstrated a negative capacitance effect beneficial for canceling passive antenna modes, thereby resulting in high transmission rates with minimal power loss. Graphical Abstract: (Figure presented.) © The Author(s), under exclusive licence to The Materials Research Society 2024.eninfo:eu-repo/semantics/closedAccessEnhance Dielectric PropertiesHigh AbsorptionIn/Nb2O5Quad-band AntennaTerahertz FilterArticle391826012611WOS:0012926459000012-s2.0-85201387564Q310.1557/s43578-024-01410-9Q2