Qasrawi, Atef Fayez2025-04-182025-04-182024Qasrawi, A. F. (2024). Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology. physica status solidi (a), 221(20), 2400449.1862-63001862-6319http://dx.doi.org/10.1002/pssa.202400449https://hdl.handle.net/20.500.12713/6338Herein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under a vacuum pressure of 10-5 mbar. BaSb films exhibit orthorhombic lattice. Over a wide range of scans, the films are mostly stoichiometric, displaying atomic contents of 50.17 and 49.83 at% for Ba and Sb, respectively. Morphological analyses of these films show the growth of large grains with sizes ranging from 1.64 to 4.14 mu m. Dynamic electrical measurements on Ag/BaSb/Ag films are conducted in the frequency domain of 0.01-1.80 GHz. The films display features of voltage-controlled negative capacitance source (VCNC) and resonance-antiresonance peaks at a critical frequency of 1.64 GHz. Lorentz models spectral analyses on these peaks indicate that they correspond to a high-frequency capacitance value of 2.8 nF, a density of oscillators of 4 x 1010 cm-3, and a scattering time constant of tau = 100 ns. Additionally, Ag/BaSb/Ag films show a wide variety in the cutoff frequency spectra, making them suitable for high-frequency applications. The cutoff frequency varies from 2.6 GHz to 1.0 THz as driving frequency increases from 1.0 to 1.64 GHz. The features of VCNC sources, resonance-antiresonance behavior, and high cutoff frequency make BaSb thin films promising for thin-film transistors and 6 G technology applications. BaSb films, fabricated by thermal deposition under 10-5 mbar vacuum, show an orthorhombic lattice and stoichiometric composition (50.17% Ba, 49.83% Sb). They exhibit large grains (1.64-4.14 mu m), voltage-controlled negative capacitance, resonance peaks at 1.64 GHz, and high-frequency applications up to 1.0 THz, making them suitable for 6G technology.image (c) 2024 WILEY-VCH GmbHeninfo:eu-repo/semantics/closedAccess6G TechnologiesBaSb Thin FilmsNegative Capacitance SourcesOrthorhombic TerahertzArticle22120WOS:0012819640000012-s2.0-85200152126Q310.1002/pssa.202400449Q2