Qasrawi, Atef FayezDaragme, Rana B.2022-06-282022-06-282022A. F. Qasrawi Department of Electrical and Electronics Engineering Istinye University 34010 Istanbul, Turkey, YB/SE/WO3/YB thin film transistors as rectifiers, 2 n-channel metal oxide semiconductor capacitors, 3 laser sensors, and microwave bandstop filters, DOI: 10.1002/pssa.2021008221862-6300http://doi.org/10.1002/pssa.202100822https://hdl.handle.net/20.500.12713/2939Herein, Yb/p–Se/p–WO3/Yb heterojunctions are employed as multifunctional 6 devices. The devices which show back-to-back Schottky (BBS) diode character 7 istics are prepared by the thermal evaporation method under a vacuum pressure 8 of 10 5 mbar. The structural and morphological analyses on these heterojunc 9 tions have shown the growth of amorphous WO3 onto meshed nano/microwire 10 network of hexagonal selenium. The BBS diodes display voltage-controlled 11 current rectification ratios. In addition, the domination of the thermionic and 12 tunneling current conduction mechanisms in the transistors is computationally 13 investigated. Moreover, studies of the capacitance–voltage characteristic curves 14 demonstrate the performance of the devices as n-channel metal oxide semi 15 conductor (NMOS) field-effect transistors responsive in the frequency domain of 16 1.0–50.0 MHz. Furthermore, the impedance spectroscopy measurements in the 17 frequency domain of 0.01–1.80 GHz indicate the possibility of using the BBS 18 diodes as bandstop filters. The microwave cutoff frequency of these filters 19 reaches 1.06 GHz. On the other hand, when ohmic contacts are formed on the 20 glass/Se/WO3 part using two carbon electrodes, the active layer between the 21 electrodes displays high sensitivity to light irradiations from He–Ne lasers, 22 indicating the possibility of performing as photosensors.eninfo:eu-repo/semantics/closedAccessBand FiltersMicrowaveN-Channel Metal Oxide Semiconductor (NMOS)14 Recti FiersSe/WO 3ArticleWOS:0008252719000012-s2.0-85134033328Q310.1002/pssa.202100822Q2