Qasrawi, Atef FayezKhanfar, Hazem K.2023-04-122023-04-122023Qasrawi, A. F., & Khanfar, H. K. (2023). Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources. Chalcogenide Letters, 20(3), 177-186. doi:10.15251/CL.2023.203.1771584-8663https://doi.org/10.15251/CL.2023.203.177https://hdl.handle.net/20.500.12713/3896Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators.eninfo:eu-repo/semantics/openAccessAg/Ge/SeO2/AgX-rayMOSNegative ConductanceNegative CapacitanceArticle203177186WOS:0009542829000012-s2.0-85150461322Q410.15251/CL.2023.203.177Q3