Browsing by Author "Qasrawi, A. F."
Now showing items 1-18 of 18
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Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR Q3 and 6G technologies
Almotiri, R. A.; Qasrawi, A. F.; Algarni, Sabah E. (IOP Publishing, 2022)Herein the fabrication and practical applications of p-MgSe thin films as active p-layer of electronic devices are reported. MgSe films are prepared by a vacuum evaporation technique onto n-Si substrates under a vacuum ... -
Amorphous WO3 thin films designed as gigahertz/terahertz dielectric lenses
Qasrawi, A. F.; Abu Alrub, Shatha N.; Daragme, Rana B. (Springer Link, 2022)Herein, tungsten oxide thin films comprising excess oxygen are treated as optical resonator suitable for gigahertz/terahertz applications. WO3 thin films which are prepared by the thermal evaporation technique under a ... -
Au nanosheets-assisted structural phase transitions, in situ monitoring of the enhanced crystallinity, and their effect on the optical and dielectric properties of CuSe/Au/CuSe thin films
Qasrawi, A. F.; Baniowdah, Tahani S.; Samen, Lara O. Abu (Wiley, 2022)Herein, stacked layers of copper selenide thin films comprising Au nanosheets in its structure are fabricated and characterized. The CuSe/Au/CuSe (CAC) thin films are prepared by the thermal evaporation technique under a ... -
Band offsets, electron affinities and optical dynamics at the CdBr2/SiO2 interfaces
Qasrawi, A. F.; Hamarsheh, Areen A. (Elsevier GmbH, 2021)Indexed keywords Funding details Abstract Herein, the structural, optical, dielectric and optical conductivity parameters of the CdBr2/SiO2 interfaces are reported. Thin films of CdBr2 are coated with 50 nm thick SiO2 ... -
Band offsets, optical conduction, photoelectric and dielectric dispersion in InSe/Sb2 Te3 heterojunctions
Alfhaid, Latifah Hamad Khalid; Qasrawi, A. F.; AlGarni, Sabah E. (SciELO, 2021)InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2 Te3 heterojunctions are constructed as NIR sensors by the thermal ... -
Design and characterization of MoO3/In2Se3 heterojunctions as terahertz/gigahertz band filters suitable for visible light communications and 3G/4G technologies
Qasrawi, A. F.; Nancy, M. A. Yaseen (IOP Publishing, 2021)Abstract Herein, MoO3/In2Se3 (MI) heterojunctions are fabricated by a vacuum deposition technique for use as wideband filters. The MI devices are composed of optical and electrical parts to detect visible light spectra ... -
Design and characterization of n -Si/p -CdO broken gap heterojunctions as high frequency PMOSFETs and microwave resonators
Harbi, Seham R.Al; Qasrawi, A. F. (Institute of Electrical and Electronics Engineers Inc., 2021)Herein, p -type CdO thin films coated onto n -type Si crystals are employed to form metal oxide semiconductor field effect transistors (MOSFET). In the broken gap design, the valence band edge of Si substrates centered at ... -
Design and characterization of ZnSe/GeO2 heterojunctions as bandstop filters and negative capacitance devices
AlGarni, Sabah E.; Qasrawi, A. F.; Khusayfan, Najla M. (Wiley-VCH Verlag, 2021)Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as bandstop filters. The stacked layers of Au/ZnSe/GeO2 are coated ... -
Effects of Ag2O nanosheets on the structural, optical, and dielectric properties of GeO2 stacked layers
Alharbi, S. R.; Qasrawi, A. F.; AlGarni, Sabah E. (Wiley-VCH Verlag, 2021)Herein, the effects of insertion of Ag2O nanosheets of thicknesses 25–75 nm between stacked layers of GeO2 on the structural, morphological, and optical properties of germanium dioxide are explored. While the stacking of ... -
Effects of polycrystalline GeO2 substrates on the structural, optical and electrical properties of ZnSe thin films
AlGarni, Sabah E.; Qasrawi, A. F.; Khusayfan, Najla M. (IOPScience, 2021)Herein, the effects of polycrystalline germanium dioxide substrates on the structural, morphological, optical and electrical properties of zinc selenide thin films are reported. Thin films of ZnSe coated onto GeO2 are ... -
Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology
Algarni, Sabah E.; Qasrawi, A. F.; Khusayfan, Najla M. (Wiley, 2022)Magnesium selenide thin films are coated onto glass and semitransparent Ptsubstrates (nanosheets) by the vacuum evaporation technique under avacuum pressure of 10−5mbar. The effect of Pt nanosheets of thicknesses of100 nm ... -
Hydraulic pressure and temperature efects on the structural, morphological and electrical properties of SeO2 powders
Algarni, Sabah E.; Qasrawi, A. F.; Khusayfan, Najla M. (Springer Link, 2022)Herein, powders of SeO2 are subjected to hydraulic pressure in the range of 1.0–12 MPa and heating cycles in the range of 290–383 K. The pressure and temperature effects on the crystalline nature, plane orientations, ... -
SeO2 microwires designed as low temperature abrupt microelectronic switches, negative resistance and negative dielectric constant sources
Qasrawi, A. F.; Ghannam, W. S. (John Wiley & Sons, Ltd, 2022)erein, the structural, morphological, compositional, and electrical properties of SeO2 microwires are studied and analyzed. Microwires of SeO2 of dimensions of 460×30×30 (μm)3 are electrically characterized in the temperature ... -
Structural, optical and electrical properties of band-aligned CdBr2/Au/Ga2S3 interfaces and their application as band filters suitable for 5G technologies
Qasrawi, A. F.; A. Hamarsheh, Areen (Springer, 2022)Herein, the structural, optical and electrical properties of band-aligned CdBr2/Ga2S3 interfaces in the presence and absence of Au nanosheets (10-20 nm) as interface spacers are reported. CdBr2/Au/Ga2S3 (CAG) stacked ... -
Transparent In/SeO2 thin film transistors designed for gigahertz/terahertz technologies
Qasrawi, A. F.; Daragme, Rana B. (Springer Link, 2022)Herein, thin films of selenium oxide are coated onto transparent indium substrates with thickness of 150 nm under vacuum pressure of 10–5 mbar. In/SeO2 optical receivers are structurally, optically and electrically ... -
Yb/inse/sb2te3 /au broken gap heterojunction devices designed as current rectifiers, tunable mos capacitors and gigahertz microwave cavities
Alfhaid, Latifah Hamad Khalid; Qasrawi, A. F.; AlGarni, Sabah E. (S.C. Virtual Company of Phisics S.R.L, 2021)Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked ... -
Yb/MoO₃/In₂Se₃/Ag sensors designed as tunneling diodes, MOSFETs, microwave resonators, laser sensors, and VLC receivers suitable for 4G/5G and VLC technologies
Qasrawi, A. F.; Yaseen, Nancy M. A. (IEEE, 2021)Herein, stacked layers of Yb/MoO₃/In₂Se₃/Ag (MI) heterojunctions are employed as multifunctional sensors. The theoretical design of the energy band diagrams of the MI sensors revealed hybrid structure. Investigations on ... -
Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators
Qasrawi, A. F.; Daragme, Rana B. (Forum of Chalcogeniders, 2022)Herein, p −WO3 thin films coated onto ytterbium thin film substrates are used as active layers to fabricate a back to back Schottky (BBS) barriers. The Schottky contacts and the tungsten oxide active layers are grown ...
