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Growth and characterization of PbSe microcrystals via the pulsed laser welding technique
(SPRINGER HEIDELBERG, 2022)
Herein lead selenide crystals are fabricated by the pulsed laser welding (PLW) technique within 2 min. The effect of the pulse width on the crystallinity, surface morphology, structural parameters, compositional stoichiometry, ...
Effects of polycrystalline GeO2 substrates on the structural, optical and electrical properties of ZnSe thin films
(IOPScience, 2021)
Herein, the effects of polycrystalline germanium dioxide substrates on the structural, morphological,
optical and electrical properties of zinc selenide thin films are reported. Thin films of ZnSe coated onto
GeO2 are ...
Effects of SeO2 epilayer on the structural, morphological, optical and dielectric properties of nanocrystalline ZnSe thin films
(Elsevier, 2022)
Herein the effects of SeO2 coating on the physical properties of thermally evaporated nanocrystalline (NC) ZnSe thin film substrates are explored. The formed ZnSe films showed nanocrystalline Zincblende phase. They contained ...
Yb/MoO₃/In₂Se₃/Ag sensors designed as tunneling diodes, MOSFETs, microwave resonators, laser sensors, and VLC receivers suitable for 4G/5G and VLC technologies
(IEEE, 2021)
Herein, stacked layers of Yb/MoO₃/In₂Se₃/Ag (MI) heterojunctions are employed as multifunctional sensors. The theoretical design of the energy band diagrams of the MI sensors revealed hybrid structure. Investigations on ...
YB/SE/WO3/YB thin film transistors as rectifiers, 2 n-channel metal oxide semiconductor capacitors, 3 laser sensors, and microwave bandstop filters
(Wiley, 2022)
Herein, Yb/p–Se/p–WO3/Yb heterojunctions are employed as multifunctional
6 devices. The devices which show back-to-back Schottky (BBS) diode character 7 istics are prepared by the thermal evaporation method under a vacuum ...
Transparent In/SeO2 thin film transistors designed for gigahertz/terahertz technologies
(Springer Link, 2022)
Herein, thin films of selenium oxide are coated onto transparent indium substrates with thickness of 150 nm under vacuum pressure of 10–5 mbar. In/SeO2 optical receivers are structurally, optically and electrically ...
Yb/inse/sb2te3 /au broken gap heterojunction devices designed as current rectifiers, tunable mos capacitors and gigahertz microwave cavities
(S.C. Virtual Company of Phisics S.R.L, 2021)
Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked ...
Yb/WO3/Ga2S3/Au multifunctional electronic hybrid devices fabricated as tunneling diodes, MOSFETS, microwave resonators and 5G band pass/reject filters
(Forum of Chalcogeniders, 2022)
Herein, Tungsten trioxide-gallium sulfide heterojunctions which are prepared by the
thermal evaporation technique under a vacuum pressure of 10-5 mbar are employed as
active media to fabricate a multifunctional device. ...
Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators
(S.C. Virtual Company of Phisics S.R.L, 2022)
Herein, p -WO3 thin films coated onto ytterbium thin film substrates are used as active layers to fabricate a back to back Schottky (BBS) barriers. The Schottky contacts and the tungsten oxide active layers are grown by ...
Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators
(Forum of Chalcogeniders, 2022)
Herein, p −WO3 thin films coated onto ytterbium thin film substrates are used as active
layers to fabricate a back to back Schottky (BBS) barriers. The Schottky contacts and the
tungsten oxide active layers are grown ...
