Now showing items 1-6 of 6
Performance of broken gap MoO3/ZnS heterojunctions as abrupt electronic switches, MOSFETs, negative capacitance FETs and bandpass filters suitable for 3G/4G technologies
Herein, MoO3/ZnS broken gap heterojunction devices are fabricated by thermal evaporation under a vacuum pressure of 10−5 mbar. The devices are characterized by X-ray difraction, energy dispersive X-ray spectroscopy, ...
Design and characterization of Yb/p− SiO2/(Yb, In) thin-film transistors for 5G resonators
(Springer Link, 2022)
Herein, Yb/ p−SiO2/(Yb, In) multifunctional thin-film transistors (TFTs) are designed and characterized. The TFT devices are fabricated in a vacuum thermal evaporation technique under a vacuum pressure of 10− ...
Effect of lanthanum substrates on the structural, optical and electrical properties of copper selenide thin films designed for 5G technologies
(Springer Link, 2022)
In this work, copper selenide thin films coated onto glass and transparent lanthanum substrates are studied. The (glass, La)/CuSe thin films which are prepared by the thermal evaporation technique under a vacuum pressure ...
Yb/WO3/Ga2S3/Au multifunctional electronic hybrid devices fabricated as tunneling diodes, MOSFETS, microwave resonators and 5G band pass/reject filters
(Forum of Chalcogeniders, 2022)
Herein, Tungsten trioxide-gallium sulfide heterojunctions which are prepared by the thermal evaporation technique under a vacuum pressure of 10-5 mbar are employed as active media to fabricate a multifunctional device. ...
Optical and electrical dynamics at the In/CuSe interfaces
Herein, thin films of copper selenide are coated onto glass and 150 nm thick transparent indium substrates. The effect of indium substrates on the structural, morphological, compositional, optical, dielectric and electrical ...
Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators
(S.C. Virtual Company of Phisics S.R.L, 2022)
Herein, p -WO3 thin films coated onto ytterbium thin film substrates are used as active layers to fabricate a back to back Schottky (BBS) barriers. The Schottky contacts and the tungsten oxide active layers are grown by ...