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Yb/inse/sb2te3 /au broken gap heterojunction devices designed as current rectifiers, tunable mos capacitors and gigahertz microwave cavities
(S.C. Virtual Company of Phisics S.R.L, 2021)
Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked ...
Band offsets, optical conduction, photoelectric and dielectric dispersion in InSe/Sb2 Te3 heterojunctions
InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2 Te3 heterojunctions are constructed as NIR sensors by the thermal ...