Now showing items 1-3 of 3
Au/CdBr2/SiO2/Au Straddling-Type heterojunctions designed as microwave multiband pass filters, negative capacitance transistors and current rectifiers
Herein, nanosheets of SiO2 of thicknesses of 25-100 nm are employed to enhance the performance of Au/CdBr2 Schottky barriers. The Au/CdBr2/SiO2/Au straddling type heterojunction devices is prepared by the thermal evaporation ...
Design of Au/Cdbr2/Au as negative capacitance devices and as band filters suitable for 4G technologies
Herein, cadmium bromide thin film devices are designed for possible use in communication technology. The 1.0 thin layer of CdBr2 is sandwiched between two Au (1.0 thick) layers using the thermal evaporation technique ...
Band offsets, electron affinities and optical dynamics at the CdBr2/SiO2 interfaces
Indexed keywords Funding details Abstract Herein, the structural, optical, dielectric and optical conductivity parameters of the CdBr2/SiO2 interfaces are reported. Thin films of CdBr2 are coated with 50 nm thick SiO2 ...