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Effects of polycrystalline GeO2 substrates on the structural, optical and electrical properties of ZnSe thin films
(IOPScience, 2021)
Herein, the effects of polycrystalline germanium dioxide substrates on the structural, morphological,
optical and electrical properties of zinc selenide thin films are reported. Thin films of ZnSe coated onto
GeO2 are ...
Yb/MoO₃/In₂Se₃/Ag sensors designed as tunneling diodes, MOSFETs, microwave resonators, laser sensors, and VLC receivers suitable for 4G/5G and VLC technologies
(IEEE, 2021)
Herein, stacked layers of Yb/MoO₃/In₂Se₃/Ag (MI) heterojunctions are employed as multifunctional sensors. The theoretical design of the energy band diagrams of the MI sensors revealed hybrid structure. Investigations on ...
Yb/inse/sb2te3 /au broken gap heterojunction devices designed as current rectifiers, tunable mos capacitors and gigahertz microwave cavities
(S.C. Virtual Company of Phisics S.R.L, 2021)
Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked ...
Au/CdBr2/SiO2/Au Straddling-Type heterojunctions designed as microwave multiband pass filters, negative capacitance transistors and current rectifiers
(Wiley, 2021)
Herein, nanosheets of SiO2 of thicknesses of 25-100 nm are employed to enhance the performance of
Au/CdBr2 Schottky barriers. The Au/CdBr2/SiO2/Au straddling type heterojunction devices is prepared by
the thermal evaporation ...
Design and characterization of MoO3/In2Se3 heterojunctions as terahertz/gigahertz band filters suitable for visible light communications and 3G/4G technologies
(IOP Publishing, 2021)
Abstract
Herein, MoO3/In2Se3 (MI) heterojunctions are fabricated by a vacuum deposition technique for use as wideband filters. The MI devices are composed of optical and electrical parts to detect visible light spectra ...
Band offsets, optical conduction, photoelectric and dielectric dispersion in InSe/Sb2 Te3 heterojunctions
(SciELO, 2021)
InSe based heterojunction devices gain importance in optoelectronic applications in NIR range
as multipurpose sensors. For this reason, InSe/Sb2
Te3
heterojunctions are constructed as NIR sensors
by the thermal ...
Design and characterization of n -Si/p -CdO broken gap heterojunctions as high frequency PMOSFETs and microwave resonators
(Institute of Electrical and Electronics Engineers Inc., 2021)
Herein, p -type CdO thin films coated onto n -type Si crystals are employed to form metal oxide semiconductor field effect transistors (MOSFET). In the broken gap design, the valence band edge of Si substrates centered at ...
Design of Au/Cdbr2/Au as negative capacitance devices and as band filters suitable for 4G technologies
(SciELO, 2021)
Herein, cadmium bromide thin film devices are designed for possible use in communication technology. The 1.0 thin layer of CdBr2 is sandwiched between two Au (1.0 thick) layers using the thermal evaporation technique ...
Design and characterization of ZnSe/GeO2 heterojunctions as bandstop filters and negative capacitance devices
(Wiley-VCH Verlag, 2021)
Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as bandstop filters. The stacked layers of Au/ZnSe/GeO2 are coated ...
Effects of Ag2O nanosheets on the structural, optical, and dielectric properties of GeO2 stacked layers
(Wiley-VCH Verlag, 2021)
Herein, the effects of insertion of Ag2O nanosheets of thicknesses 25–75 nm between stacked layers of GeO2 on the structural, morphological, and optical properties of germanium dioxide are explored. While the stacking of ...