Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu
Recent Submissions
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Au/CrSe stacked layers designed as optical absorbers, tunneling barriers and negative capacitance sources
(Elsevier, 2023)Herein thin films of CrSe (500 nm) are deposited onto glass and semitransparent gold nanosheets (100 nm) under a vacuum pressure of 10−5 mbar. Au nanosheets substrates induced the formation of CrSe instead of CrSe2 which ... -
Electrical properties of amorphous Cu doped InSe thin films
(Springer, 2023)In this study, we employed thermal evaporation under vacuum conditions to introduce copper dopants into amorphous InSe thin films. Our objective was to scrutinize the effects of varied copper doping concentrations on the ... -
Optically controlled n −Si/p −SeO2/p −SiO2 microwave resonators designed for 5G/6G communication technology
(Physica Scripta, 2023)Herein n−Si/p−SiO2 interfaces comprising layers of p-SeO2 are employed as an optically controllable microwave resonators. The stacked layers of SeO2 (500 nm) and SiO2 (50 nm) were deposited onto n- type Si thin crystals ... -
LaGe2 thin films designed as band filters for 6G communication technology
(Springer, 2023)Herein, LaGe2 thin films with thickness of 150 nm are grown on thin layers of indium by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films are structurally, morphologically, compositionally ... -
Enhanced crystallinity, optical conductivity and terahertz cutoff frequency of stacked layers of FeSe2 by Al nanosheets
(Elsevier, 2023)Herein a 250 nm thick two stacked layers of FeSe2 (abbreviated as FF) thin films and FF stacks comprising aluminum nanosheets of thicknesses of 50 nm (FAF) are studied. Amorphous FeSe2 thin films are deposited using thermal ... -
Production of PtInx thin films by the pulsed laser welding technique
(Springer, 01.08.2023)Herein, PtInx nanosheets are fabricated by the pulsed laser welding technique (PLW) in an argon atmosphere within seconds from stacked layers of Pt (150 nm) and In (150 nm). Pt/In stacked layers coated by thermal evaporation ... -
Lead selenide thin films designed for laser sensing and visible light communications
(Springer, 2023)Herein thin films of PbSe are coated onto amorphous glass, amorphous silicon (a−Si) and crystalline n−type Si (n−Si) wafers by the thermal evaporation technique under a vacuum pressure of 10− 5 mbar. The films are ... -
La/Ge stacked nanosheets designed as optical resonators, microwave oscillators and 5 G/6 G gigahertz receivers
(Optik, 2023)Glass/Ge and La/Ge stacked layers, 100 nm thick, were prepared via thermal evaporation under a vacuum pressure of 10-5 mbar. Structural analysis confirmed amorphous growth of Ge nanosheets. Optically coating Ge onto La ... -
Growth and characterization of lanthanum germanide thin films by the thermal evaporation technique
(Wiley, 2023)Lanthanum germanide (La6Ge) thin films are successfully fabricated using the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The resulting films display an orthorhombic structure, characterized by ... -
Formation and characterization of MgSe alloys by pulsed laser welding technique
(Wiley, 2023)Herein, MgSe alloys with different compositions are fabricated using laser welding techniques within a couple of minutes in an argon atmosphere. The optimum laser welding parameters, which reveal the correct compositio ... -
High-performance n – Si/p – SeO2 /p – SiO2 heterojunction photodetectors for potential application in visible light communication technology
(Springer, 2023)Photodetectors suitable for visible light communication (VLC) technology were fabricated and characterized in this study. The photodetectors were designed using two p-type stacked layers of SeO2 and SiO2, which were coated ... -
Selenium oxide based laser sensors designed for optoelectronic applications
(Springer, 2023)In this study, stacked layers of p− SeO2 and p− SiO2 were formed onto n− type silicon wafers to act as laser photosensors. The p− type stacked layers were fabricated using the thermal evaporation technique under a ... -
Characterization of PbWO4 thin films formed by the pulsed laser welding technique
(Elsevier, 2023)within couple of seconds in an argon atmosphere. Thin films of Pb (100 nm)/WO3 (500 nm) were deposited by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films were then exposed to a pulse ... -
In/MgSe Terahertz filters with enhanced optical conduction and light absorption
(Springer, 2023)In this work, semitransparent indium thin films with thickness of 200 nm were used as substrates for depositing magnesium selenide thin films (200 nm). Both indium and MgSe films were coated onto ultrasonically cleaned ... -
Enhanced properties of indium thin films by stacking with platinum nanosheets designed for advanced terahertz/ gigahertz applications
(Optical and Quantum Electronics, 2023)Herein stacked layers of metallic indium (150 nm) and platinum (50–250 nm) thin films are fabricated as a terahertz/gigahertz filters. Indium thin films are produced by the thermal evaporation technique under a vacuum ... -
Induced crystallization and enhanced light absorption and optical conduction in WO3 films via pulsed laser welding technique
(Springer, 2023)Herein amorphous WO3 thin films prepared by the thermal evaporation technique under a vacuum pressure of 10− 5 mbar are treated via pulsed laser welding technique (PLW) in an argon atmosphere. An induced crystallization ... -
Enhancement of the electrical properties of Au/MgSe/Au microwave resonators via pulsed laser welding of MgSe and Au nanosheets
(Springer, 2023)Herein, stacked nanosheets of Au (50 nm) and MgSe (100 nm) are fabricated by the thermal evaporation technique and welded by pulsed lasers of wavelengths of 1064 nm within few seconds. Au/MgSe (AMA) and welded Au/MgSe (PLW) ... -
Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources
(Virtual Co. Physics SRL., 2023)Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing ... -
ITO/MgSe interfaces designed as gigahertz/terahertz filters
(IOP Science, 2023)Herein a new class of MgSe gigahertz/terahertz band filters operatives in the frequency domain of 1.0 GHz-1.86 THz is fabricated and experimentally tested. MgSe band filters are coated onto glass and indium tin oxide (ITO) ... -
Properties of (Glass, Pb)/MgSe interfaces designed as terahertz band filters
(Springer, 2023)Herein, thin films of MgSe (300 nm) are deposited onto glass and semitransparent Pb (150 nm) substrates by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films are structurally, morphologically, ...
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