Yayın tarihi için Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu listeleme
Toplam kayıt 53, listelenen: 1-20
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Bulk-boundary correspondence in soft matter
(Amer Physical Soc, 2019)Bulk-boundary correspondence is the emergence of features at the boundary of a material that are dependent on and yet distinct from the properties of the bulk of the material. The diverse applications of this idea in ... -
Band offsets, electron affinities and optical dynamics at the CdBr2/SiO2 interfaces
(Elsevier GmbH, 2021)Indexed keywords Funding details Abstract Herein, the structural, optical, dielectric and optical conductivity parameters of the CdBr2/SiO2 interfaces are reported. Thin films of CdBr2 are coated with 50 nm thick SiO2 ... -
Effects of Ag2O nanosheets on the structural, optical, and dielectric properties of GeO2 stacked layers
(Wiley-VCH Verlag, 2021)Herein, the effects of insertion of Ag2O nanosheets of thicknesses 25–75 nm between stacked layers of GeO2 on the structural, morphological, and optical properties of germanium dioxide are explored. While the stacking of ... -
Band offsets, dielectric dispersion and some applications of CdSe/GeO2 heterojunctions
(Elsevier GmbH, 2021)Herein, the formation, structural, morphological, compositional, optical, dielectric, photoelectrical and electrical properties of the CdSe/GeO2 heterojunctions are explored. While the surface displayed formation of deficient ... -
Design and characterization of ZnSe/GeO2 heterojunctions as bandstop filters and negative capacitance devices
(Wiley-VCH Verlag, 2021)Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as bandstop filters. The stacked layers of Au/ZnSe/GeO2 are coated ... -
Design and characterization of n -Si/p -CdO broken gap heterojunctions as high frequency PMOSFETs and microwave resonators
(Institute of Electrical and Electronics Engineers Inc., 2021)Herein, p -type CdO thin films coated onto n -type Si crystals are employed to form metal oxide semiconductor field effect transistors (MOSFET). In the broken gap design, the valence band edge of Si substrates centered at ... -
Band offsets, optical conduction, photoelectric and dielectric dispersion in InSe/Sb2 Te3 heterojunctions
(SciELO, 2021)InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2 Te3 heterojunctions are constructed as NIR sensors by the thermal ... -
Effects of polycrystalline GeO2 substrates on the structural, optical and electrical properties of ZnSe thin films
(IOPScience, 2021)Herein, the effects of polycrystalline germanium dioxide substrates on the structural, morphological, optical and electrical properties of zinc selenide thin films are reported. Thin films of ZnSe coated onto GeO2 are ... -
Design and characterization of MoO3/In2Se3 heterojunctions as terahertz/gigahertz band filters suitable for visible light communications and 3G/4G technologies
(IOP Publishing, 2021)Abstract Herein, MoO3/In2Se3 (MI) heterojunctions are fabricated by a vacuum deposition technique for use as wideband filters. The MI devices are composed of optical and electrical parts to detect visible light spectra ... -
Au/CdBr2/SiO2/Au Straddling-Type heterojunctions designed as microwave multiband pass filters, negative capacitance transistors and current rectifiers
(Wiley, 2021)Herein, nanosheets of SiO2 of thicknesses of 25-100 nm are employed to enhance the performance of Au/CdBr2 Schottky barriers. The Au/CdBr2/SiO2/Au straddling type heterojunction devices is prepared by the thermal evaporation ... -
Yb/MoO₃/In₂Se₃/Ag sensors designed as tunneling diodes, MOSFETs, microwave resonators, laser sensors, and VLC receivers suitable for 4G/5G and VLC technologies
(IEEE, 2021)Herein, stacked layers of Yb/MoO₃/In₂Se₃/Ag (MI) heterojunctions are employed as multifunctional sensors. The theoretical design of the energy band diagrams of the MI sensors revealed hybrid structure. Investigations on ... -
Design of Au/Cdbr2/Au as negative capacitance devices and as band filters suitable for 4G technologies
(SciELO, 2021)Herein, cadmium bromide thin film devices are designed for possible use in communication technology. The 1.0 thin layer of CdBr2 is sandwiched between two Au (1.0 thick) layers using the thermal evaporation technique ... -
Yb/inse/sb2te3 /au broken gap heterojunction devices designed as current rectifiers, tunable mos capacitors and gigahertz microwave cavities
(S.C. Virtual Company of Phisics S.R.L, 2021)Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked ... -
FPGA design of a fourth order elliptic IIR band-pass filter using LabVIEW
(DergiPark, 2021)Infinite impulse response filters are often used to meet the demand of modern electrical engineering applications such as image processing, digital signal processing and telecommunications because of the high selectivity ... -
FPGA hardware implementation of a SHA384 accelerator for internet of things applications
(DergiPark, 2021)The abundance of the IoT devices surrounding us brings new opportunities and challenges. IoT technology enables remote monitoring and control of cyber-physical systems on a global scale. One key aspect of IoT technology ... -
Field-programmable gate array (FPGA) hardware design and implementation of a new area efficient elliptic curve crypto-processor
(TUBITAK SCIENTIFIC & TECHNICAL RESEARCH COUNCIL TURKEY, 2021)Elliptic curve cryptography provides a widely recognized secure environment for information exchange in resource-constrained embedded system applications, such as Internet-of-Things, wireless sensor networks, and radio ... -
Performance of broken gap MoO3/ZnS heterojunctions as abrupt electronic switches, MOSFETs, negative capacitance FETs and bandpass filters suitable for 3G/4G technologies
(Springer, 2022)Herein, MoO3/ZnS broken gap heterojunction devices are fabricated by thermal evaporation under a vacuum pressure of 10−5 mbar. The devices are characterized by X-ray difraction, energy dispersive X-ray spectroscopy, ... -
Design and characterization of Yb/p− SiO2/(Yb, In) thin-film transistors for 5G resonators
(Springer Link, 2022)Herein, Yb/ p−SiO2/(Yb, In) multifunctional thin-film transistors (TFTs) are designed and characterized. The TFT devices are fabricated in a vacuum thermal evaporation technique under a vacuum pressure of 10− ... -
Au nanosheets-assisted structural phase transitions, in situ monitoring of the enhanced crystallinity, and their effect on the optical and dielectric properties of CuSe/Au/CuSe thin films
(Wiley, 2022)Herein, stacked layers of copper selenide thin films comprising Au nanosheets in its structure are fabricated and characterized. The CuSe/Au/CuSe (CAC) thin films are prepared by the thermal evaporation technique under a ... -
A new read–write collision-based SRAM PUF implemented on Xilinx FPGAs
(Springer Science and Business Media Deutschland GmbH, 2022)Physically unclonable functions (PUFs) are device-specific digital fingerprints derived from physical properties. They are used in critical cryptographic applications, including unique ID generation, key generation, and ...
