Browsing Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu by Title
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Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR Q3 and 6G technologies
(IOP Publishing, 2022)Herein the fabrication and practical applications of p-MgSe thin films as active p-layer of electronic devices are reported. MgSe films are prepared by a vacuum evaporation technique onto n-Si substrates under a vacuum ... -
Ag/SeO2/C avalanche type resonant tunneling schottky barriers
(SciELO - Scientific Electronic Library Online, 2022)Herein, the design and characterization of Ag/SeO2/C avalanche type resonant tunneling devices are reported. Thin pellets of SeO2 nano-powders pressed under hydraulic pressure of 1.0 MPa which is used as the active material ... -
Amorphous WO3 thin films designed as gigahertz/terahertz dielectric lenses
(Springer Link, 2022)Herein, tungsten oxide thin films comprising excess oxygen are treated as optical resonator suitable for gigahertz/terahertz applications. WO3 thin films which are prepared by the thermal evaporation technique under a ... -
Assessment of dietary and lifestyle responses after COVID-19 vaccine availability in selected arab countries
(Frontiers in Nutrition, 2022)Background: The COVID-19 pandemic has been consistently associated with unhealthy lifestyle behaviors and dietary practices. This study aimed to assess the dietary and lifestyle behaviors of adults after COVID-19 vaccine ... -
Au nanosheets-assisted structural phase transitions, in situ monitoring of the enhanced crystallinity, and their effect on the optical and dielectric properties of CuSe/Au/CuSe thin films
(Wiley, 2022)Herein, stacked layers of copper selenide thin films comprising Au nanosheets in its structure are fabricated and characterized. The CuSe/Au/CuSe (CAC) thin films are prepared by the thermal evaporation technique under a ... -
Au/CdBr2/SiO2/Au Straddling-Type heterojunctions designed as microwave multiband pass filters, negative capacitance transistors and current rectifiers
(Wiley, 2021)Herein, nanosheets of SiO2 of thicknesses of 25-100 nm are employed to enhance the performance of Au/CdBr2 Schottky barriers. The Au/CdBr2/SiO2/Au straddling type heterojunction devices is prepared by the thermal evaporation ... -
Au/CrSe stacked layers designed as optical absorbers, tunneling barriers and negative capacitance sources
(Elsevier, 2023)Herein thin films of CrSe (500 nm) are deposited onto glass and semitransparent gold nanosheets (100 nm) under a vacuum pressure of 10−5 mbar. Au nanosheets substrates induced the formation of CrSe instead of CrSe2 which ... -
Band offsets, dielectric dispersion and some applications of CdSe/GeO2 heterojunctions
(Elsevier GmbH, 2021)Herein, the formation, structural, morphological, compositional, optical, dielectric, photoelectrical and electrical properties of the CdSe/GeO2 heterojunctions are explored. While the surface displayed formation of deficient ... -
Band offsets, dielectric dispersion, optical conduction and impedance spectroscopy analyses of WO3/ Ga2S3 heterojunctions
(Springer, 2022)Stacked layers of amorphous WO3 and Ga2S3 are fabricated by the thermal evaporation technique under a vacuum pressure of 10– 5 mbar. The structural, compositional, optical, dielectric and electrical properties of the ... -
Band offsets, electron affinities and optical dynamics at the CdBr2/SiO2 interfaces
(Elsevier, 2021)Indexed keywords Funding details Abstract Herein, the structural, optical, dielectric and optical conductivity parameters of the CdBr2/SiO2 interfaces are reported. Thin films of CdBr2 are coated with 50 nm thick SiO2 ... -
Band offsets, optical conduction, photoelectric and dielectric dispersion in InSe/Sb2 Te3 heterojunctions
(SciELO, 2021)InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2 Te3 heterojunctions are constructed as NIR sensors by the thermal ... -
Bulk-boundary correspondence in soft matter
(Amer Physical Soc, 2019)Bulk-boundary correspondence is the emergence of features at the boundary of a material that are dependent on and yet distinct from the properties of the bulk of the material. The diverse applications of this idea in ... -
Characterization and applications of ITO/SeO2 interfaces
(Springer Link, 2022)Herein, indium tin oxide (ITO) thin film substrates are employed to fabricate ITO/SeO2 multifunctional interfaces. The effects of ITO substrates on the physical properties of SeO2 thin films are explored by the structural, ... -
Characterization of PbWO4 thin films formed by the pulsed laser welding technique
(Elsevier, 2023)within couple of seconds in an argon atmosphere. Thin films of Pb (100 nm)/WO3 (500 nm) were deposited by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films were then exposed to a pulse ... -
Classical and intelligent methods in model extraction and stabilization of a dual-axis reaction wheel pendulum: a comparative study
(Elsevier B.V., 2022)Controlling underactuated open-loop unstable systems is challenging. In this study, first, both nonlinear and linear models of a dual-axis reaction wheel pendulum (DA-RWP) are extracted by employing Lagrangian equations ... -
Copper doping effects on the optical and dielectric properties of amorphous indium selenide thin films
(Springer, 2023)(a-InSe) thin films were doped with copper using the thermal evaporation technique under a vacuum pressure of 10– 5 mbar. The aim was to investigate the impact of Cu doping on the optical absorption, energy band gap, ... -
Design and characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS field effect transistors, negative capacitance effect devices and band pass/reject filters suitable for 4G technologiet
(Springer Link, 2022)Herein, the efect of Yb, Al, Cu and Au metal substrates on the electrical performance of germanium oxide-based devices is reported. Back-to-back Schottky-type metal-insulator-metal (MIM) electronic devices with the ... -
Design and characterization of MoO3/In2Se3 heterojunctions as terahertz/gigahertz band filters suitable for visible light communications and 3G/4G technologies
(IOP Publishing, 2021)Abstract Herein, MoO3/In2Se3 (MI) heterojunctions are fabricated by a vacuum deposition technique for use as wideband filters. The MI devices are composed of optical and electrical parts to detect visible light spectra ... -
Design and characterization of n -Si/p -CdO broken gap heterojunctions as high frequency PMOSFETs and microwave resonators
(Institute of Electrical and Electronics Engineers Inc., 2021)Herein, p -type CdO thin films coated onto n -type Si crystals are employed to form metal oxide semiconductor field effect transistors (MOSFET). In the broken gap design, the valence band edge of Si substrates centered at ... -
Design and characterization of Yb/p− SiO2/(Yb, In) thin-film transistors for 5G resonators
(Springer Link, 2022)Herein, Yb/ p−SiO2/(Yb, In) multifunctional thin-film transistors (TFTs) are designed and characterized. The TFT devices are fabricated in a vacuum thermal evaporation technique under a vacuum pressure of 10− ...
