Browsing Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu by Title
Now showing items 53-72 of 80
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La/Ge stacked nanosheets designed as optical resonators, microwave oscillators and 5 G/6 G gigahertz receivers
(Optik, 2023)Glass/Ge and La/Ge stacked layers, 100 nm thick, were prepared via thermal evaporation under a vacuum pressure of 10-5 mbar. Structural analysis confirmed amorphous growth of Ge nanosheets. Optically coating Ge onto La ... -
LaGe2 thin films designed as band filters for 6G communication technology
(Springer, 2023)Herein, LaGe2 thin films with thickness of 150 nm are grown on thin layers of indium by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films are structurally, morphologically, compositionally ... -
Lead selenide microcrystals fabricated by the pulsed laser welding technique employed as 6G technology microwave resonators and as MOS capacitors
(Elsevier, 2023)value larger than 100 GHz nominating the devices for 6G technology applications. Moreover, investigations on the current conduction mechanism have shown the preferred current conduction by quantum mechanical tunneling ... -
Lead selenide thin films designed for laser sensing and visible light communications
(Springer, 2023)Herein thin films of PbSe are coated onto amorphous glass, amorphous silicon (a−Si) and crystalline n−type Si (n−Si) wafers by the thermal evaporation technique under a vacuum pressure of 10− 5 mbar. The films are ... -
A new read–write collision-based SRAM PUF implemented on Xilinx FPGAs
(Springer Science and Business Media Deutschland GmbH, 2022)Physically unclonable functions (PUFs) are device-specific digital fingerprints derived from physical properties. They are used in critical cryptographic applications, including unique ID generation, key generation, and ... -
Optical and dielectric dispersion in the Ge/In2Se3/Ga2S3 interfaces
(Forum of Chalcogeniders, 2022)In this article, the optical and dielectric performance of the Ge, Ge/In2Se3 and Ge/In2Se3/Ga2S3 interfaces are reported and discussed. The growth nature of the physically vacuum deposited thin film layers is investigated ... -
Optical and electrical dynamics at the In/CuSe interfaces
(Elsevier, 2022)Herein, thin films of copper selenide are coated onto glass and 150 nm thick transparent indium substrates. The effect of indium substrates on the structural, morphological, compositional, optical, dielectric and electrical ... -
Optical properties of chromium-selenide films designed for terahertz applications
(Optik, Eylul 2023)Herein the effects of indium substrates on the properties of chromium selenide thin films are reported. Chromium selenide thin films and indium substrates are prepared by the thermal evaporation technique under a vacuum ... -
Optically controlled n −Si/p −SeO2/p −SiO2 microwave resonators designed for 5G/6G communication technology
(Physica Scripta, 2023)Herein n−Si/p−SiO2 interfaces comprising layers of p-SeO2 are employed as an optically controllable microwave resonators. The stacked layers of SeO2 (500 nm) and SiO2 (50 nm) were deposited onto n- type Si thin crystals ... -
Optoelectronic performance of n−Si/p−MgSe heterojunctions as a visible light communication component
(Elsevier B.V., 2022)Herein magnesium selenide thin films coated onto glass and Si substrates are studied and characterized. The films, prepared by the thermal vacuum evaporation technique under a vacuum pressure of 10−5 mbar, are structurally, ... -
Performance of broken gap MoO3/ZnS heterojunctions as abrupt electronic switches, MOSFETs, negative capacitance FETs and bandpass filters suitable for 3G/4G technologies
(Springer, 2022)Herein, MoO3/ZnS broken gap heterojunction devices are fabricated by thermal evaporation under a vacuum pressure of 10−5 mbar. The devices are characterized by X-ray difraction, energy dispersive X-ray spectroscopy, ... -
Plasmonic interactions at the Pb/SeO2 interfaces designed as terahertz/gigahertz optical receivers
(Elsevier Science, 2022)Herein semitransparent lead substrates of thicknesses of 200 nm are employed as plasmonic interfaces to enhance the optoelectronic performance of SeO2 thin films. Pb/SeO2 interfaces are fabricated by the physical vapor ... -
Preparation and characterization of orthorhombic AgMn alloys by the pulsed laser welding technique
(Wiley, 2022)Herein, AgMn alloys are prepared by the pulsed laser welding technique in an argon atmosphere. The effect of the laser pulses width and stoichiometric composition of the alloys on the structural, compositional, morphological, ... -
Production of PtInx thin films by the pulsed laser welding technique
(Springer, 01.08.2023)Herein, PtInx nanosheets are fabricated by the pulsed laser welding technique (PLW) in an argon atmosphere within seconds from stacked layers of Pt (150 nm) and In (150 nm). Pt/In stacked layers coated by thermal evaporation ... -
Properties of (Glass, Pb)/MgSe interfaces designed as terahertz band filters
(Springer, 2023)Herein, thin films of MgSe (300 nm) are deposited onto glass and semitransparent Pb (150 nm) substrates by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films are structurally, morphologically, ... -
Pt/PbSe optoelectronic receivers designed for 6G and terahertz communication technologies
(SPRINGER, 2023)Herein PbSe thin films are coated onto glass and semitransparent platinum substrates. The films which are treated as optoelectronic signal receivers are deposited by the thermal evaporation technique under a vacuum pressure ... -
Pt/SeO2 optical receivers designed for terahertz and 5G/6G technologies
(IOPscience, 2022)Selenium oxide thin films are highly transparent optical layers proper for optoelectronic technology. However, SeO2 films are rarely studied and observed suffering from clustery surface morphology, low light absorbability ... -
Selenium oxide based laser sensors designed for optoelectronic applications
(Springer, 2023)In this study, stacked layers of p− SeO2 and p− SiO2 were formed onto n− type silicon wafers to act as laser photosensors. The p− type stacked layers were fabricated using the thermal evaporation technique under a ... -
SeO2 microwires designed as low temperature abrupt microelectronic switches, negative resistance and negative dielectric constant sources
(John Wiley & Sons, Ltd, 2022)erein, the structural, morphological, compositional, and electrical properties of SeO2 microwires are studied and analyzed. Microwires of SeO2 of dimensions of 460×30×30 (μm)3 are electrically characterized in the temperature ... -
Structural, optical and electrical properties of band-aligned CdBr2/Au/Ga2S3 interfaces and their application as band filters suitable for 5G technologies
(Springer, 2022)Herein, the structural, optical and electrical properties of band-aligned CdBr2/Ga2S3 interfaces in the presence and absence of Au nanosheets (10-20 nm) as interface spacers are reported. CdBr2/Au/Ga2S3 (CAG) stacked ...
