Browsing Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu by Title
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Yb/inse/sb2te3 /au broken gap heterojunction devices designed as current rectifiers, tunable mos capacitors and gigahertz microwave cavities
(S.C. Virtual Company of Phisics S.R.L, 2021)Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked ... -
Yb/MoO₃/In₂Se₃/Ag sensors designed as tunneling diodes, MOSFETs, microwave resonators, laser sensors, and VLC receivers suitable for 4G/5G and VLC technologies
(IEEE, 2021)Herein, stacked layers of Yb/MoO₃/In₂Se₃/Ag (MI) heterojunctions are employed as multifunctional sensors. The theoretical design of the energy band diagrams of the MI sensors revealed hybrid structure. Investigations on ... -
YB/SE/WO3/YB thin film transistors as rectifiers, 2 n-channel metal oxide semiconductor capacitors, 3 laser sensors, and microwave bandstop filters
(Wiley, 2022)Herein, Yb/p–Se/p–WO3/Yb heterojunctions are employed as multifunctional 6 devices. The devices which show back-to-back Schottky (BBS) diode character 7 istics are prepared by the thermal evaporation method under a vacuum ... -
Yb/WO3/Ga2S3/Au multifunctional electronic hybrid devices fabricated as tunneling diodes, MOSFETS, microwave resonators and 5G band pass/reject filters
(Forum of Chalcogeniders, 2022)Herein, Tungsten trioxide-gallium sulfide heterojunctions which are prepared by the thermal evaporation technique under a vacuum pressure of 10-5 mbar are employed as active media to fabricate a multifunctional device. ... -
Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators
(Forum of Chalcogeniders, 2022)Herein, p −WO3 thin films coated onto ytterbium thin film substrates are used as active layers to fabricate a back to back Schottky (BBS) barriers. The Schottky contacts and the tungsten oxide active layers are grown ...