• Türkçe
    • English
  • English 
    • Türkçe
    • English
  • Login
View Item 
  •   DSpace@İSÜ
  • Fakülteler
  • Mühendislik ve Doğa Bilimleri Fakültesi
  • Elektrik-Elektronik Mühendisliği Bölümü
  • Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu
  • View Item
  •   DSpace@İSÜ
  • Fakülteler
  • Mühendislik ve Doğa Bilimleri Fakültesi
  • Elektrik-Elektronik Mühendisliği Bölümü
  • Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Au/CdBr2/SiO2/Au Straddling-Type heterojunctions designed as microwave multiband pass filters, negative capacitance transistors and current rectifiers

Thumbnail

View/Open

Tam Metin / Full Text (653.4Kb)

Date

2021

Author

Qasrawi, Atef Fayez
Hamarsheh, Areen A.

Metadata

Show full item record

Citation

Qasrawi, A. F., & Hamarsheh, A. A. (2021). Au/CdBr2/SiO2/Au Straddling‐Type heterojunctions designed as microwave multiband pass filters, negative capacitance transistors and current rectifiers. physica status solidi (a).

Abstract

Herein, nanosheets of SiO2 of thicknesses of 25-100 nm are employed to enhance the performance of Au/CdBr2 Schottky barriers. The Au/CdBr2/SiO2/Au straddling type heterojunction devices is prepared by the thermal evaporation technique. It is observed that SiO2 layers enhances the crystallinity of CdBr2 through increasing the crystallite sizes and decreasing the defect density, stacking faults and microstrain by 50%, 56%, 32% and 34%, respectively. A work function of 6.38 eV is determined from the temperature dependent electrical resistivity measurements of p−type CdBr2. In addition, it was observed that, when coated with 50 nm thick SiO2, the Au/CdBr2/SiO2/Au straddling type transistors can reveal high current rectification ratios of 6.9× 102 at low biasing voltages in the range of 0.06-0.30 V. The alternating current signals analysis in the microwave range of spectra indicated that the current conduction mechanism is dominated by the correlated barrier hopping and quantum mechanical tunneling. It was observed that the Au/CdBr2/SiO2/Au devices exhibit negative effect accompanied with resonance-antiresonance in the capacitance spectra. Moreover, the microwave cutoff frequency which reaches ~165.1 GHz and the magnitude of reflection coefficient spectra has shown that the device under study can perform as multiband pass/stop filters suitable for wire/wireless communication applications including 3G/4G technologies.

Source

Physica Status Solidi

URI

https://doi.org/10.1002/pssa.202100327
https://hdl.handle.net/20.500.12713/2100

Collections

  • Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu [54]
  • Scopus İndeksli Yayınlar Koleksiyonu [1911]
  • WoS İndeksli Yayınlar Koleksiyonu [1982]



DSpace software copyright © 2002-2015  DuraSpace
Contact Us | Send Feedback
Theme by 
@mire NV
 

 




| Instruction | Guide | Contact |

DSpace@İSÜ

by OpenAIRE
Advanced Search

sherpa/romeo

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsTypeLanguageDepartmentCategoryPublisherAccess TypeInstitution AuthorThis CollectionBy Issue DateAuthorsTitlesSubjectsTypeLanguageDepartmentCategoryPublisherAccess TypeInstitution Author

My Account

LoginRegister

Statistics

View Google Analytics Statistics

DSpace software copyright © 2002-2015  DuraSpace
Contact Us | Send Feedback
Theme by 
@mire NV
 

 


|| Guide|| Instruction || Library || İstinye University || OAI-PMH ||

İstinye University, İstanbul, Turkey
If you find any errors in content, please contact:

Creative Commons License
İstinye University Institutional Repository is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 Unported License..

DSpace@İSÜ:


DSpace 6.2

tarafından İdeal DSpace hizmetleri çerçevesinde özelleştirilerek kurulmuştur.