• Türkçe
    • English
  • English 
    • Türkçe
    • English
  • Login
View Item 
  •   DSpace@İSÜ
  • Fakülteler
  • Mühendislik ve Doğa Bilimleri Fakültesi
  • Elektrik-Elektronik Bölümü
  • Makale Koleksiyonu
  • View Item
  •   DSpace@İSÜ
  • Fakülteler
  • Mühendislik ve Doğa Bilimleri Fakültesi
  • Elektrik-Elektronik Bölümü
  • Makale Koleksiyonu
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Optical and dielectric dispersion in the Ge/In2Se3/Ga2S3 interfaces

Thumbnail

View/Open

Tam Metin / Full Text (846.3Kb)

Date

2022

Author

Qasrawi, Atef Fayez
Omareya, O. A.

Metadata

Show full item record

Citation

Qasrawi, A. F., Omareya, O. A. (2022). Optical and dielectric dispersion in the Ge/In2Se3/Ga2S3 interfaces. Chalcogenide Letters, 19(5), 319-327.

Abstract

In this article, the optical and dielectric performance of the Ge, Ge/In2Se3 and Ge/In2Se3/Ga2S3 interfaces are reported and discussed. The growth nature of the physically vacuum deposited thin film layers is investigated by means of X-ray diffraction and energy dispersive X-ray spectroscopy. Each 200 nm thick layer exhibited an amorphous type of crystallization with appropriate atomic stoichiometry. Optically, the Ge/In2Se3/Ga2S3 system is found to exhibit a conduction and a valence band offsets of values of 0.53 and 0.47 eV at the Ge/In2Se3 and of values of 0.30 and 0.70 eV at the In2Se3/Ga2S3 interfaces, respectively. The values are high enough to actualize quantum confinements in the heterojunction device. The formed double and three layers displayed higher light absorbability than single layers. On the other hand, the dielectric dispersion analysis has shown a wide tunability in the dielectric property in visible light and near IR regions. The dielectric responses at the Ge/In2Se3 and at the Ge/In2Se3/Ga2S3 interfaces are linear below 2.10 eV and 1.53 eV, respectively. The modeling of the dielectric function revealed the optical conductivity parameters presented by the drift mobility, scattering time, plasmon frequency and free electron density. It was observed that the quantum condiment at the Ge/In2Se3 interfaces improved both of the drift mobility and made the scattering time longer at femtosecond levels. The establishing of the second quantum confinement at the second interface In2Se3/Ga2S3 raised the drift mobility more and extended the scattering time further. With the estimated plasmon frequencies, the formation of the Ge/In2Se3/Ga2S3 interface appears to be promising for use in optoelectronic device production especially in photodetection issues.

Source

Chalcogenide Letters

Volume

19

Issue

5

URI

https://doi.org/10.15251/CL.2022.195.319
https://hdl.handle.net/20.500.12713/2667

Collections

  • Makale Koleksiyonu [39]
  • Scopus İndeksli Yayınlar Koleksiyonu [1449]
  • WoS İndeksli Yayınlar Koleksiyonu [1488]



DSpace software copyright © 2002-2015  DuraSpace
Contact Us | Send Feedback
Theme by 
@mire NV
 

 




| Instruction | Guide | Contact |

DSpace@İSÜ

by OpenAIRE
Advanced Search

sherpa/romeo

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsTypeLanguageDepartmentCategoryPublisherAccess TypeInstitution AuthorThis CollectionBy Issue DateAuthorsTitlesSubjectsTypeLanguageDepartmentCategoryPublisherAccess TypeInstitution Author

My Account

LoginRegister

Statistics

View Google Analytics Statistics

DSpace software copyright © 2002-2015  DuraSpace
Contact Us | Send Feedback
Theme by 
@mire NV
 

 


|| Guide|| Instruction || Library || İstinye University || OAI-PMH ||

İstinye University, İstanbul, Turkey
If you find any errors in content, please contact:

Creative Commons License
İstinye University Institutional Repository is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 Unported License..

DSpace@İSÜ:


DSpace 6.2

tarafından İdeal DSpace hizmetleri çerçevesinde özelleştirilerek kurulmuştur.