Yb/WO3/Ga2S3/Au multifunctional electronic hybrid devices fabricated as tunneling diodes, MOSFETS, microwave resonators and 5G band pass/reject filters

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dc.contributor.authorQasrawi, A. F.
dc.contributor.authorAbu Alrub, S. N.
dc.date.accessioned2024-05-19T14:50:23Z
dc.date.available2024-05-19T14:50:23Z
dc.date.issued2022
dc.departmentİstinye Üniversitesien_US
dc.description.abstractHerein, Tungsten trioxide-gallium sulfide heterojunctions which are prepared by the thermal evaporation technique under a vacuum pressure of 10(-5) mbar are employed as active media to fabricate a multifunctional device. The WO3/Ga2S3 (WG) heterojunctions which are deposited onto Yb substrates and top contacted with Au pads of areas of 1.5x 10(-2) cm(2) displayed electronic hybrid device structure composed of two Schottky arms connected to a pn junction. The constructed Yb/WG/Au devices showed tunneling diode characteristics with current conduction dominated by thermionic emission and quantum mechanical tunneling. In additions, the capacitance-voltage characteristic curves indicated the formation of PMOS and NMOS under reverse and forwards biasing conditions demonstrating a metal oxide semiconductor fields effect (MOSFET) transistor characteristics. Moreover, the impedance spectroscopy tests on the devices have shown that the device can perform as tunable microwave resonator suitable for 5G technologies. The resonator showed frequency based capacitance tunability and displayed microwave band pass/reject filter characteristics. The microwave cutoff frequency of the Yb/WG/Au band filters reaches 9.65 GHz with voltage standing wave ratios of 1.06 and return loss factor of similar to 29 dB.en_US
dc.description.sponsorshipDeanship of Scientific Research (DSR), Arab American University, Jenin, Palestine; DSR of Istinye University, Istanbul, Turkey; DSRen_US
dc.description.sponsorshipThis work was supported by the Deanship of Scientific Research (DSR), Arab American University, Jenin, Palestine and by DSR of Istinye University, Istanbul, Turkey. The authors, therefore, gratefully acknowledge the DSR technical and financial support.en_US
dc.identifier.endpage276en_US
dc.identifier.issn1584-8663
dc.identifier.issue4en_US
dc.identifier.startpage267en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12713/5691
dc.identifier.volume19en_US
dc.identifier.wosWOS:000787335500003en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherVirtual Co Physics Srlen_US
dc.relation.ispartofChalcogenide Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmz20240519_kaen_US
dc.subjectWo3/Ga2s3 Mosfetsen_US
dc.subjectTunneling Diodesen_US
dc.subjectMicrowave Resonatorsen_US
dc.subject5g Technologyen_US
dc.titleYb/WO3/Ga2S3/Au multifunctional electronic hybrid devices fabricated as tunneling diodes, MOSFETS, microwave resonators and 5G band pass/reject filtersen_US
dc.typeArticleen_US

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