Isotype n-Si/n-Bi2O3 heterojunctions designed as high-frequency MOS devices, microwave band filters and quad band 5G/6G antennas

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dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorAlawneh, Isam
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorZanoon, Tareq
dc.contributor.authorKhanfar, Hazem K.
dc.date.accessioned2025-04-17T07:25:49Z
dc.date.available2025-04-17T07:25:49Z
dc.date.issued2025
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractHerein, a hybrid device structure is designed for high-frequency applications. The device is fabricated by the thermal evaporation of n-Bi2O3 nanosheets onto n-Si substrates to form an isotype heterojunction encapsulated between two Schottky barriers (Ag/n-Si, Pt/n-Bi2O3). The hybrid-structured device exhibits metal-oxide-semiconductor (MOS) characteristics that can be depleted in the frequency domain of 1-70 MHz. The complex device structure exhibits two identical flat-band built-in potentials with a value of 0.97 eV. MOS devices display a charging/discharging cycle within a time scale of 14.3 ns. In addition, when experimentally tested as band-pass/reject filters in the quad-band range of 0.01-1.80 GHz, the device shows a high cutoff frequency up to similar to 19 GHz at a quad frequency of 1.80 GHz. Moreover, when employed as a multiport 5G/6G antenna using a network analyzer working in the frequency domain of 1.0-6.0 GHz, the devices show promising antenna characteristics suitable for the targeted technology applications. Specifically, the measured reflection and transmission coefficient parameters for the two-port antenna designs show isolation parameters down to -24.5 dB. The features of the two-port antennas, which demonstrate good isolation between transmitted signals, are promising for use of the Ag/n-Si/n-Bi2O3/Pt hybrid devices in high-frequency networks including 5G/6G technology.
dc.description.sponsorshipArab American University of Jenin Arab American University, Palestine and Istinye University
dc.identifier.citationAlawneh, I., Qasrawi, A. F., Zanoon, T., & Khanfar, H. K. (2025). Isotype n-Si/n-Bi2O3 Heterojunctions Designed as High-Frequency MOS Devices, Microwave Band Filters and Quad Band 5G/6G Antennas. Journal of Electronic Materials, 1-11.
dc.identifier.doi10.1007/s11664-025-11814-w
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.scopus2-s2.0-85218987597
dc.identifier.scopusqualityQ2
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-025-11814-w
dc.identifier.urihttps://hdl.handle.net/20.500.12713/6122
dc.identifier.wosWOS:001434832000001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.institutionauthorQasrawi, Atef Fayez
dc.institutionauthoridAtef Fayez Qasrawi / 0000-0001-8193-6975
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of electronic materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectIsotype Si/Bi2O3
dc.subjectMOS
dc.subjectQuad Band
dc.subject5G/6G Antenna
dc.subjectNetwork
dc.titleIsotype n-Si/n-Bi2O3 heterojunctions designed as high-frequency MOS devices, microwave band filters and quad band 5G/6G antennas
dc.typeArticle

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