Bi2O3 nanosheets- based photodetectors designed for visible light communication technology
Yükleniyor...
Tarih
17.03.2025
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Physica Scripta (IOP)
Erişim Hakkı
info:eu-repo/semantics/embargoedAccess
Özet
In this work, n-type bismuth oxide nanosheets deposited onto n-type silicon substrates by a vacuum
evaporation technique under a vacuum pressure of 10−5 mbar is fabricated to perform as a daylight
photodetectors suitable for visible light and infrared communication technology. The n-Si/n-Bi2O3
heterojunction devices exhibited conduction and valence band offsets of 0.89 eV 0.73 eV, respectively.
Two Schottky barriers Pt/n-Si and Pt/Bi2O3 of respective barrier heights of 1.65 eV and 0.76 eV are
formed on the sides of the heterojunction devices. Dark electrical characterization on the
Pt/n-Si/n-Bi2O3/Pt hybrid structure showed a maximum current rectification ratio of 166. The
current transport mechanism in the devices was dominated by the Richardson –Schottky thermionic
conduction type and by electric field assisted charge carrier tunneling within a barrier of width and
height of 60 nmand 0.83 eV, respectively. On the other hand, electrical measurements handled under
the illumination of a daylight mini-lamp have shown that the photodetectors under focus exhibit
maximum current responsivity, external quantum efficiency percentage, specific detectivity and linear
dynamic range of 30 AW−1, 3000%, 1.7´1012 Jones and 36.4 dB under illumination power of 82 μW,
respectively. The features of the bismuth oxide based photodetectors nominate them for visible and
infrared lights illumination technology.
Açıklama
Anahtar Kelimeler
isotype n-Si/n-Bi2O3, rectifiers, photodiodes, visible light communication, IR detectors
Kaynak
physica scripta
WoS Q Değeri
Scopus Q Değeri
Cilt
Sayı
100
