Bi2O3 nanosheets- based photodetectors designed for visible light communication technology

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dc.authorid0000-0001-8193-6975
dc.authorscopusid6603962677
dc.authorwosidR-4409-2019
dc.contributor.authorQAsrawi Atef Fayez
dc.contributor.authorZanoon Tateq
dc.contributor.authorAlawneh Isam
dc.contributor.authorKhanfar Hazem
dc.date.accessioned2025-04-18T10:52:04Z
dc.date.available2025-04-18T10:52:04Z
dc.date.issued17.03.2025
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractIn this work, n-type bismuth oxide nanosheets deposited onto n-type silicon substrates by a vacuum evaporation technique under a vacuum pressure of 10−5 mbar is fabricated to perform as a daylight photodetectors suitable for visible light and infrared communication technology. The n-Si/n-Bi2O3 heterojunction devices exhibited conduction and valence band offsets of 0.89 eV 0.73 eV, respectively. Two Schottky barriers Pt/n-Si and Pt/Bi2O3 of respective barrier heights of 1.65 eV and 0.76 eV are formed on the sides of the heterojunction devices. Dark electrical characterization on the Pt/n-Si/n-Bi2O3/Pt hybrid structure showed a maximum current rectification ratio of 166. The current transport mechanism in the devices was dominated by the Richardson –Schottky thermionic conduction type and by electric field assisted charge carrier tunneling within a barrier of width and height of 60 nmand 0.83 eV, respectively. On the other hand, electrical measurements handled under the illumination of a daylight mini-lamp have shown that the photodetectors under focus exhibit maximum current responsivity, external quantum efficiency percentage, specific detectivity and linear dynamic range of 30 AW−1, 3000%, 1.7´1012 Jones and 36.4 dB under illumination power of 82 μW, respectively. The features of the bismuth oxide based photodetectors nominate them for visible and infrared lights illumination technology.
dc.identifier.doihttps://doi.org/10.1088/1402-4896/adbce9
dc.identifier.issue100
dc.identifier.startpage045925
dc.identifier.urihttps://hdl.handle.net/20.500.12713/7220
dc.indekslendigikaynakWeb of Science
dc.institutionauthorQasrawi , Atef Fayez
dc.institutionauthorid0000-0001-8193-6975
dc.language.isoen
dc.publisherPhysica Scripta (IOP)
dc.relation.ispartofphysica scripta
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.subjectisotype n-Si/n-Bi2O3
dc.subjectrectifiers
dc.subjectphotodiodes
dc.subjectvisible light communication
dc.subjectIR detectors
dc.titleBi2O3 nanosheets- based photodetectors designed for visible light communication technology
dc.typeArticle

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