La/Ge stacked nanosheets designed as optical resonators, microwave oscillators and 5 G/6 G gigahertz receivers
Yükleniyor...
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Optik
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Glass/Ge and La/Ge stacked layers, 100 nm thick, were prepared via thermal evaporation under a vacuum pressure of 10-5 mbar. Structural analysis confirmed amorphous growth of Ge nanosheets. Optically coating Ge onto La improved light absorption, energy band gap, and dielectric responses. In addition, dielectric spectra fitting using Lorentz approach showed increased free electron density, plasmon frequency, and drift mobility (up to 1153 cm2/Vs) in Ge due to lanthanum presence. Moreover, LGA Schottky barrier devices (La/Ge/Au) exhibited tunneling-type current conduction with 0.815 eV barrier height and 40 nm width. Resistance spectra of these Schottky barriers displayed negative resistance near 0.40 GHz, while capacitance spectra showed resonance-antiresonance behavior. La/Ge and LGA interface can be utilized for optical receivers and microwave resonators in 5 G/6 G technologies.
Açıklama
Anahtar Kelimeler
La/Ge/Au Schottky Devices, Optical Filters, Lorentz Oscillator, Microwave Resonators
Kaynak
Optik
WoS Q Değeri
Scopus Q Değeri
Cilt
Sayı
Künye
Alkhamisi, M. M., Qasrawi, A. F., & Khanfar, H. K. (2023). La/Ge stacked nanosheets designed as optical resonators, microwave oscillators and 5 G/6 G gigahertz receivers. Optik, 171105.
