Characterization and applications of ITO/SeO2 interfaces

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlfhaid, Latifah Hamad Khalid
dc.contributor.authorQasrawi, A. F.
dc.date.accessioned2022-06-09T06:06:43Z
dc.date.available2022-06-09T06:06:43Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, indium tin oxide (ITO) thin film substrates are employed to fabricate ITO/SeO2 multifunctional interfaces. The effects of ITO substrates on the physical properties of SeO2 thin films are explored by the structural, morphological, optical and electrical characterization techniques. Amorphous SeO2 thin films are prepared by the thermal evaporation technique under a vacuum, pressure of 10– 5 mbar, that exhibit induced crystallization process when it is coated onto ITO substrates. ITO substrates additionally forced evolution of SeO2 nanotubes of diameters of 10–20 nm. Optically, coating SeO2 onto ITO substrates enhance the light absorbability in the visible and infrared ranges of light, blue shifted the energy band gap of SeO2 and forced dielectric resonance at 3.42 eV and 2.27 eV. Electrically, the ITO/SeO2/Ag devices display negative conductance and negative capacitance effects in the frequency domains of 0.01–0.35 GHz and 0.01–1.80 GHz, respectively. These features are beneficial for signal amplification and noise reduction in electronic circuits. In addition, the impedance spectroscopy analyses shows that the ITO/SeO2/Ag devices operate at high impedance mode in the microwave frequency domain. It also shows band stop filter characteristics that are well performing in the gigahertz frequency domain. The features of the band stop filter nominate the ITO/SeO2/Ag devices for use in 5G technologies.en_US
dc.identifier.citationAlfhaid, L.H.K., Qasrawi, A.F. (2022). Characterization and applications of ITO/SeO2 interfaces. Optical and Quantum Electronics, 54.en_US
dc.identifier.doi10.1007/s11082-022-03760-2en_US
dc.identifier.scopus2-s2.0-85131725429en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1007/s11082-022-03760-2
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2841
dc.identifier.volume54en_US
dc.identifier.wosWOS:000809783700001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringer Linken_US
dc.relation.ispartofOptical and Quantum Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectITO/SeO2en_US
dc.subjectHigh Absorbanceen_US
dc.subjectNegative Conductanceen_US
dc.subjectNegative Capacitanceen_US
dc.subjectBand Stop Filteren_US
dc.titleCharacterization and applications of ITO/SeO2 interfacesen_US
dc.typeArticleen_US

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