Enhanced performance of Pb/FeSe2 interfaces designed for electrical applications

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlharbi, Seham R.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAlgarni, Sabah E.
dc.date.accessioned2024-02-22T07:35:55Z
dc.date.available2024-02-22T07:35:55Z
dc.date.issued2024en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractIn this work, iron selenide layers are deposited onto glass and lead substrates to perform as terahertz filters. The layers are deposited by the thermal evaporation technique under a vacuum pressure of 10–5 mbar. Glass/FeSe2 (GFS) and Pb/FeSe2 (PFS) films are structurally, morphologically and electrically characterized. The atomic composition of the GFS films contained excess selenium that reacted with Pb forming a PbSe layer. This layer induced the crystallinity of iron selenide. The preferred crystal structure of FeSe2 was cubic with cell parameters of a = b = c = 3.04 Å and space group Pm3m . Lead substrates increased the room temperature electrical conductivity of GFS films from of 1.52 ×10?5(?cm)?1 to 6.88 ×10?2(?cm)?1 . Analyses of the electrical conduction mechanism in the temperature range of 25–330 K have shown that coating the films onto Pb substrates shifted the accepter level from 182 to 58 meV, decreased the degree of structural disor-der, shorten the average hopping range from 59 to 19 Å and increased the density of localized states near Fermi level by two orders of magnitude. The conductivity of PFS films exhibited degenerate semiconductor characteristics in the temperature range of 120–28 K. This feature is followed by an evidence of exhibiting superconductivity at critical temperatures lower than 24 K. On the other hand the impedance spectroscopy measurements in the driving signal frequency domain of 0.01–1.0 GHz have shown that Pb/FeSe2/Ag interfaces can perform as band filters showing microwave cutoff frequency values reach-ing 100 GHz at driving signal frequency of 1.0 GHz. These band filters are ideal for 6G technology nominating PFS films for high frequency applications.en_US
dc.identifier.citationAlharbi, S. R., Qasrawi, A. F., & Algarni, S. E. (2024). Enhanced performance of Pb/FeSe2 interfaces designed for electrical applications. Applied Physics A, 130(2), 142.en_US
dc.identifier.doi10.1007/s00339-023-07268-8en_US
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-85184271074en_US
dc.identifier.startpage142en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-023-07268-8
dc.identifier.urihttps://hdl.handle.net/20.500.12713/4009
dc.identifier.volume130en_US
dc.identifier.wosWOS:001156079500002en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofApplied Physics A Materials Science and Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPb/FeSe2en_US
dc.subjectVariable Range Hoppingen_US
dc.subjectSuperconductivityen_US
dc.subjectInduced Crystallinityen_US
dc.subject6G Technologyen_US
dc.titleEnhanced performance of Pb/FeSe2 interfaces designed for electrical applicationsen_US
dc.typeArticleen_US

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