Performance of broken gap MoO3/ZnS heterojunctions as abrupt electronic switches, MOSFETs, negative capacitance FETs and bandpass filters suitable for 3G/4G technologies

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorNancy M. A. Yaseen
dc.date.accessioned2022-01-10T07:05:03Z
dc.date.available2022-01-10T07:05:03Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, MoO3/ZnS broken gap heterojunction devices are fabricated by thermal evaporation under a vacuum pressure of 10?5 mbar. The devices are characterized by X-ray difraction, energy dispersive X-ray spectroscopy, ultraviolet-visible light spectroscopy and impedance spectroscopy. Three channels composed of one Schottky arm (Ag/ZnS) and two ohmic arms (Au, C)/ZnS are formed on the epilayer of the amorphous (MoO3)/polycrystalline (ZnS) heterojunctions. Optical analyses show that the broken gap devices exhibit valance and conduction band ofsets of 2.6 eV and 2.8 eV, respectively. Practical tests on the devices show that they can behave as abrupt electronic switches with biasing independent current rectifcation ratios of 2.7 × 103 at an applied voltage of 0.14 V. The Au/MoO3/ZnS/Ag channels displayed metal oxide feld efect transistor characteristics as they are efective in the frequency domain of 3.0–20 MHz. In addition to its performance as a negative capacitance FET, the broken gap device can be employed as a radiowave/microwave cavity with notch frequency ( fn) values of 0.86 GHz, 1.16 GHz, 1.69 GHz and 1.75 GHz. The ideality of the resonators was observed at 1.16 GHz for the Au/MoO3/ZnS/C channel. This channel displayed bandpass flter characteristics with voltage standing wave ratios of 1.0 and return loss values of 40.2 dBs.en_US
dc.identifier.citationQasrawi, A.F., Yaseen, N.M.A. Performance of Broken Gap MoO3/ZnS Heterojunctions as Abrupt Electronic Switches, MOSFETs, Negative Capacitance FETs and Bandpass Filters Suitable for 3G/4G Technologies. J. Electron. Mater. (2022).en_US
dc.identifier.doi10.1007/s11664-021-09353-1en_US
dc.identifier.scopus2-s2.0-85122659636en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1007/s11664-021-09353-1
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2381
dc.identifier.wosWOS:000740423000001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMoO3/ZnS Heterojunctionen_US
dc.subjectBand Offsetsen_US
dc.subjectMicrowave Resonatorsen_US
dc.subjectNegative Capacitanceen_US
dc.titlePerformance of broken gap MoO3/ZnS heterojunctions as abrupt electronic switches, MOSFETs, negative capacitance FETs and bandpass filters suitable for 3G/4G technologiesen_US
dc.typeArticleen_US

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