Effects of si slabs on the performance of cdO thin films designed for optoelectronic applications

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorAlGarnia, Sabah E.
dc.contributor.authorQasrawi, Atef Fayez
dc.date.accessioned2022-05-18T11:50:55Z
dc.date.available2022-05-18T11:50:55Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, the structural, morphological, optical and electrical properties of CdO stacked layers comprising Si slabs of thickness of 100 nm are investigated. The performance of the stacked layers, which are prepared by the thermal evaporation technique under vacuum pressure of 10-5 mbar, is remarkably enhanced via insertion of Si thin slabs. The presence of Si slabs between the layers of CdO improves the crystallinity and surface morphology, increases the light absorbability in the ultraviolet and visible ranges of light and also increases the dielectric constant, the quality factor, and optical conductivity values. The optical conductivity parameters, which are analyzed in accordance with Drude-Lorentz approach, have shown that the insertion of the Si layers rises the values of the drift mobility of holes in CdO and lowers the free holes concentration. The energy band gap of CdO films is narrowed from 2.20 to 1.27 eV upon insertion of Si slabs. The applicability of the plasmonic CdO/Si/CdO devices as low pass filers inen_US
dc.identifier.citationAlGarnia, S. E., Qasrawi, A. F. (2022). Effects of si slabs on the performance of cdO thin films designed for optoelectronic applications. Materials Research, 25.en_US
dc.identifier.doi10.1590/1980-5373-MR-2021-0622en_US
dc.identifier.issn1516-1439en_US
dc.identifier.scopus2-s2.0-85131322397en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1590/1980-5373-MR-2021-0622
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2666
dc.identifier.volume25en_US
dc.identifier.wosWOS:000802096200002en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSciELOen_US
dc.relation.ispartofMaterials Researchen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCdO/Si/CdOen_US
dc.subjectHigh Absorbanceen_US
dc.subjectOptical Conductivityen_US
dc.subjectMicrowave Cavityen_US
dc.titleEffects of si slabs on the performance of cdO thin films designed for optoelectronic applicationsen_US
dc.typeArticleen_US

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