Optically controlled n ?Si/p ?SeO2/p ?SiO2 microwave resonators designed for 5G/6G communication technology

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.date.accessioned2023-08-31T09:15:21Z
dc.date.available2023-08-31T09:15:21Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein n?Si/p?SiO2 interfaces comprising layers of p-SeO2 are employed as an optically controllable microwave resonators. The stacked layers of SeO2 (500 nm) and SiO2 (50 nm) were deposited onto n- type Si thin crystals by the thermal evaporation technique under a vacuum pressure of 10?5 mbar. Ytterbium and Au metals were coated onto SiO2 and Si layers, respectively, to form Schottky arms. Energy band diagram analyses were performed to confirm the formation of doubled conduction and valence band offsets. These offsets create energy barriers and potential wells that contribute to the bistable behavior. Photo-impedance spectroscopic measurements were conducted on the device under blue light, demonstrating its ability to function as a light-power tunable microwave resonator andMOScapacitor. In the absence of light, negative capacitance (NC) effects were observed above a driving frequency of 1.07 GHz. As the device was exposed to light and the light power increased, the frequency range ofNCeffects shifted to higher driving frequencies. Furthermore, the range ofNC effects became narrower with increasing light power, indicating a more limited frequency range for the manifestation of negative capacitance. In addition, n- Si/ p- SeO2/ p- SiO2 microwaves resonators displayed high cutoff frequency exceeding 0.10 THz at driving frequency of 1.07 GHz in the dark. The driving frequency also shifted toward larger values as light power is increased indicating the ability to optically control the cutoff frequency range and value. The high response of the capacitance, conductance, cutoff frequency spectra and the dependence of capacitance–voltage characteristics on incident light power nominate the device as microwave resonators andMOS electro-optic devices suitable for 5G/6G communication technology.en_US
dc.identifier.citationQasrawi, A. F. (2023). Optically controlled n− Si/p− SeO2/p− SiO2 microwave resonators designed for 5G/6G communication technology. Physica Scripta, 98(9), 095925.en_US
dc.identifier.doi10.1088/1402-4896/aceb1een_US
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-85168524911en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1088/1402-4896/aceb1e
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3956
dc.identifier.volume98en_US
dc.identifier.wosWOS:001048393000001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherPhysica Scriptaen_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSi/SeO2/SiO2en_US
dc.subject5G/6Gen_US
dc.subjectMOSen_US
dc.subjectPhoto-Impedanceen_US
dc.subjectNegative Capacitanceen_US
dc.titleOptically controlled n ?Si/p ?SeO2/p ?SiO2 microwave resonators designed for 5G/6G communication technologyen_US
dc.typeArticleen_US

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