Effect of lanthanum substrates on the structural, optical and electrical properties of copper selenide thin films designed for 5G technologies

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorGhannam , Arwa N. Abu
dc.date.accessioned2021-11-25T06:21:15Z
dc.date.available2021-11-25T06:21:15Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractIn this work, copper selenide thin films coated onto glass and transparent lanthanum substrates are studied. The (glass, La)/CuSe thin films which are prepared by the thermal evaporation technique under a vacuum pressure of 10?5  mbar are structurally, morphologically, optically, dielectrically and electrically characterized. Lanthanum substrates improved the crystallinity by increasing the crystallite size and decreasing both of the microstrains and defect density of copper selenide. La substrates redshifts the energy band gap and doubled the dielectric constant values. In addition, employing Drude–Lorentz approaches for optical conduction to fit the dielectric constant provided information about the effects of La substrates on the drift mobility, plasmon frequency, free carrier density and scattering times at femtosecond level. The drift mobility increased and the plasmon frequency range is modified when La substrates are used. Verifying impedance spectroscopy tests in the microwave frequency domain have shown the ability of the La(gate)/CuSe/Ag (source) transistors performing as band pass filters. These filters are suitable for 5G technologies. The microwave cutoff frequency reached ~ 5.0  GHz at a notch frequency of 2.80  GHz of the glass/La/CuSe/Ag highpass filters.en_US
dc.identifier.citationQasrawi, A.F., Ghannam, A.N.A. Effect of lanthanum substrates on the structural, optical and electrical properties of copper selenide thin films designed for 5G technologies. Opt Quant Electron 54, 4 (2022).en_US
dc.identifier.doi10.1007/s11082-021-03375-zen_US
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85120715761en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1007/s11082-021-03375-z
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2274
dc.identifier.volume54en_US
dc.identifier.wosWOS:000722225700001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringer Linken_US
dc.relation.ispartofOptical and Quantum Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGlass/La/CuSe Interfacesen_US
dc.subjectThin Film Transistoren_US
dc.subjectOptical Conductionsen_US
dc.subjectMicrowave Resonatorsen_US
dc.titleEffect of lanthanum substrates on the structural, optical and electrical properties of copper selenide thin films designed for 5G technologiesen_US
dc.typeArticleen_US

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