Growth and characterization of lanthanum germanide thin films by the thermal evaporation technique

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlkhamisi, Manal M.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhanfar, Hazem K.
dc.date.accessioned2023-07-04T10:52:14Z
dc.date.available2023-07-04T10:52:14Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractLanthanum germanide (La6Ge) thin films are successfully fabricated using the thermal evaporation technique under a vacuum pressure of 10?5 mbar. The resulting films display an orthorhombic structure, characterized by lattice parameters of a = 8.725 ?, b = 8.063 ?, and c = 5.569 ?. Optical analysis of the La6Ge thin films reveal their high transparency, with an energy bandgap of 3.75±0.04 eV. The bandgap exhibits indirect allowed transitions and featured energy band tails with widths measuring (1.64±0.14) eV. In addition, dielectric dispersion analyses indicate the presence of two dominant dielectric resonance peaks centered at 3.15 and 2.08 eV. Moreover, the La6Ge films demonstrate a terahertz (THz) cutoff frequency of 1.0 THz when illuminated with infrared and visible light. This cutoff frequency increases to 45.6 THz in the ultraviolet range. Furthermore, by utilizing the Drude–Lorentz method, the investigation of optical conductivity parameters reveals that the lanthanum germanide optical filters can achieve free hole density and drift mobility values of 14.44 cm2 V?1 s?1 and 2.8×1018 cm?3, respectively, under infrared light irradiation. The outstanding optical and dielectric properties exhibited by the La6Ge thin films make them excellent candidates for highly transparent optical filters suitable for terahertz technology.en_US
dc.description.sponsorshipKing Abdulaziz Universityen_US
dc.identifier.citationAlkhamisi, M. M., Qasrawi, A. F., & Khanfar, H. K. (2023). Growth and Characterization of Lanthanum Germanide Thin Films by the Thermal Evaporation Technique. Crystal Research and Technology, 2300049.en_US
dc.identifier.doi10.1002/crat.202300049en_US
dc.identifier.scopus2-s2.0-85163308160en_US
dc.identifier.startpage2300049en_US
dc.identifier.urihttps://doi.org/10.1002/crat.202300049
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3933
dc.identifier.wosWOS:001017712000001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherWileyen_US
dc.relation.ispartofCrystal Research and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectLa6Ge Thin Filmsen_US
dc.subjectOrthorhombicen_US
dc.subjectTerahertzen_US
dc.subjectThermal Evaporation Techniqueen_US
dc.titleGrowth and characterization of lanthanum germanide thin films by the thermal evaporation techniqueen_US
dc.typeArticleen_US

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