Growth and characterization of vacuum evaporated MgSe thin films

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlmotiri, R. A.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAl Garni, Sabah E.
dc.date.accessioned2022-10-27T13:22:45Z
dc.date.available2022-10-27T13:22:45Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, thin flms of magnesium selenide are thermally grown in a vacuum deposition (VD) system onto glass substrates under a vacuum pressure of 10–5 mbar. The flms are structurally, morphologically, compositionally, and optically characterized. It is observed that MgSe thin flms coated by the VD technique are composed of polycrystalline MgSe1.07 (a=5.149 ?, space group Fm3m) and MgSe1.96 (a=6.514 ?, space group P3?a) cubic phases. The flms displayed an average roughness value of 13 nm. They also exhibited a direct energy band gap of 2.54 eV and an indirect band gap of 3.34 eV. In addition, detailed studies of the dielectric properties, optical conductivity, and terahertz cutof frequency spectra showed the ability of MgSe thin flms to perform as a dielectric material. High dielectric constant values are reached in the near-infrared range of light. As optical conductors, the flms displayed one IR, two visible, and two ultraviolet light oscillators showing a maximum plasmon frequency of 8.19 GHz in the UV range. The drift mobility of these oscillators varied in the range of 4.57–9.67 cm2 / Vs. Moreover, the terahertz cutof frequency for these oscillators varied in the range of 11–175 THz proofng the suitability of MgSe flms for terahertz technology issues.en_US
dc.identifier.citationAlmotiri, R. A., Qasrawi A. F., Al Garni, Sabah E. (2022). Growth and Characterization of Vacuum Evaporated MgSe Thin Films.Journal of Electronic Materials, doi:10.1007/s11664-022-09999-5en_US
dc.identifier.doi10.1007/s11664-022-09999-5en_US
dc.identifier.endpage401en_US
dc.identifier.scopus2-s2.0-85140624153en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage394en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-022-09999-5
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3203
dc.identifier.volume52en_US
dc.identifier.wosWOS:000875912300003en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMgSeen_US
dc.subjectThermal Evaporationen_US
dc.subjectRock-Salten_US
dc.subjectTerahertzen_US
dc.subjectOptical Receiveren_US
dc.titleGrowth and characterization of vacuum evaporated MgSe thin filmsen_US
dc.typeArticleen_US

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