Transparent In/SeO2 thin film transistors designed for gigahertz/terahertz technologies

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorDaragme, Rana B.
dc.date.accessioned2022-07-28T10:56:29Z
dc.date.available2022-07-28T10:56:29Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, thin films of selenium oxide are coated onto transparent indium substrates with thickness of 150 nm under vacuum pressure of 10–5 mbar. In/SeO2 optical receivers are structurally, optically and electrically characterized. Induced crystallization of tetragonal SeO2 showing homogeneous composition and continuous film formation is achieved via indium substrates. Indium thin films enhance the light absorbability and optical conductivity without altering the energy band gap of SeO2. Strong interaction between In and Se at the ultrathin interface of In/SeO2 led to the formation of a new second band gap of 0.92 eV relating to direct allowed transitions in InSe. Indium substrates increased the dielectric constant of SeO2 by more than four times, making SeO2 suitable for nonlinear optical applications. The terahertz cutoff frequency changed in the range of 0.9–14.0 THz. In-depth analysis of the optical conduction in In/SeO2 films showed that the films display drift mobility, plasmon frequency and free carrier density values that render In/SeO2 a suitable candidate for fabrication of thin film transistors. The transistors displayed microwave resonator features presented by double band stop filters. The filters showed return loss values larger than 20 dB and voltage standing wave ratios of 1.0 at 1.16 GHz. A negative capacitance effect is also observed for the transistors under study.en_US
dc.identifier.citationQasrawi, A. F., Daragme, R. B. (2022). Transparent In/SeO2 thin film transistors designed for gigahertz/terahertz technologies. Journal of electronic materials.en_US
dc.identifier.doi10.1007/s11664-022-09834-xen_US
dc.identifier.issn0361-5235en_US
dc.identifier.scopus2-s2.0-85137967011en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-022-09834-x
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3057
dc.identifier.wosWOS:000830927300001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringer Linken_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIn/SeO2en_US
dc.subjectHigh Absorbanceen_US
dc.subjectNegative Capacitanceen_US
dc.subjectBand Stop Filteren_US
dc.subjectOptical Receiveren_US
dc.titleTransparent In/SeO2 thin film transistors designed for gigahertz/terahertz technologiesen_US
dc.typeArticleen_US

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