Au/CdBr2/SiO2/Au Straddling-Type heterojunctions designed as microwave multiband pass filters, negative capacitance transistors and current rectifiers

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorHamarsheh, Areen A.
dc.date.accessioned2021-09-24T05:49:36Z
dc.date.available2021-09-24T05:49:36Z
dc.date.issued2021en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, nanosheets of SiO2 of thicknesses of 25-100 nm are employed to enhance the performance of Au/CdBr2 Schottky barriers. The Au/CdBr2/SiO2/Au straddling type heterojunction devices is prepared by the thermal evaporation technique. It is observed that SiO2 layers enhances the crystallinity of CdBr2 through increasing the crystallite sizes and decreasing the defect density, stacking faults and microstrain by 50%, 56%, 32% and 34%, respectively. A work function of 6.38 eV is determined from the temperature dependent electrical resistivity measurements of p?type CdBr2. In addition, it was observed that, when coated with 50 nm thick SiO2, the Au/CdBr2/SiO2/Au straddling type transistors can reveal high current rectification ratios of 6.9× 102 at low biasing voltages in the range of 0.06-0.30 V. The alternating current signals analysis in the microwave range of spectra indicated that the current conduction mechanism is dominated by the correlated barrier hopping and quantum mechanical tunneling. It was observed that the Au/CdBr2/SiO2/Au devices exhibit negative effect accompanied with resonance-antiresonance in the capacitance spectra. Moreover, the microwave cutoff frequency which reaches ~165.1 GHz and the magnitude of reflection coefficient spectra has shown that the device under study can perform as multiband pass/stop filters suitable for wire/wireless communication applications including 3G/4G technologies.en_US
dc.identifier.citationQasrawi, A. F., & Hamarsheh, A. A. (2021). Au/CdBr2/SiO2/Au Straddling‐Type heterojunctions designed as microwave multiband pass filters, negative capacitance transistors and current rectifiers. physica status solidi (a).en_US
dc.identifier.doi10.1002/pssa.202100327en_US
dc.identifier.endpage21en_US
dc.identifier.issn1862-6319en_US
dc.identifier.scopus2-s2.0-85116825329en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1en_US
dc.identifier.urihttps://doi.org/10.1002/pssa.202100327
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2100
dc.identifier.wosWOS:000705122200001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherWileyen_US
dc.relation.ispartofPhysica Status Solidien_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/CdBr2/SiO2/Auen_US
dc.subjectWork Functionen_US
dc.subjectRectifiersen_US
dc.subjectBand Filtersen_US
dc.subjectMicrowave Resonatorsen_US
dc.titleAu/CdBr2/SiO2/Au Straddling-Type heterojunctions designed as microwave multiband pass filters, negative capacitance transistors and current rectifiersen_US
dc.typeArticleen_US

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