Design and characterization of Yb/p? SiO2/(Yb, In) thin-film transistors for 5G resonators

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhanfar, Hazem Khulqi
dc.contributor.authorAlyat, Sara Bassam
dc.date.accessioned2022-01-21T08:57:16Z
dc.date.available2022-01-21T08:57:16Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, Yb/ p?SiO2/(Yb, In) multifunctional thin-film transistors (TFTs) are designed and characterized. The TFT devices are fabricated in a vacuum thermal evaporation technique under a vacuum pressure of 10? 5 mbar. The transistors are composed of 100-nm-thick layer of p-SiO2 coated onto ytterbium substrates. While the Yb/SiO2/Yb back-to-back Schottky (BBS) channels display NMOS (metal–oxide–semiconductor) characteristics and behave as current rectifiers with rectification ratios of 3.2 ×102 , the Yb/SiO2/In BBS channels show PMOS characteristics and displayed a non-rectifying properties. Investigations which targeted ac signal analysis on these devices in the frequency domain of 0.01-1.80 GHz have shown that the current conduction are dominated by the correlated barrier hoping and by the quantum mechanical tunneling. The density of localized states near Fermi level and the relaxation times are highly influenced by the orbital overlapping of Yb and In metals with that of SiO2. It was shown that; while Yb/SiO2/Yb channels are suitable for use as microwave band filters, Yb/SiO2/In can perform as radiowave band reject filters. The calculated notch and microwave cutoff frequencies for these filters lay in the range defined for 4G/5G mobile technologies. The Yb/SiO2/Yb filters can pass more than 96% of the propagating signal with high-quality power transmissions.en_US
dc.identifier.citationQasrawi, A.F., Khanfar, H.K. & Alyat, S.B. Design and Characterization of Yb/p− SiO2/(Yb, In) Thin-film Transistors for 5G Resonators. Braz J Phys 52, 37 (2022).en_US
dc.identifier.doi10.1007/s13538-022-01058-yen_US
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-85123350034en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1007/s13538-022-01058-y
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2417
dc.identifier.volume52en_US
dc.identifier.wosWOS:000744980600001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringer Linken_US
dc.relation.ispartofBrazilian Journal of Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectYb/SiOen_US
dc.subjectThin-film Transistoren_US
dc.subjectCMOSen_US
dc.subjectBand Filteren_US
dc.subjectMicrowave Resonatorsen_US
dc.titleDesign and characterization of Yb/p? SiO2/(Yb, In) thin-film transistors for 5G resonatorsen_US
dc.typeArticleen_US

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