Growth and characterization of chromium selenide thin films for optoelectronic applications

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAljaloud, Amjad Salamah M.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAlfhaid, Latifah Hamad Khalid
dc.date.accessioned2023-11-06T10:55:26Z
dc.date.available2023-11-06T10:55:26Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein amorphous and stoichiometric CrSe2 thin films are obtained by the thermal deposition (TD) technique under a vacuum pressure of 10?5 mbar. The films are structurally, morphologically, optically and dielectrically characterized. It is observed that CrSe2 thin films grown by TD technique exhibit optical excitations within direct and indirect allowed energy band gaps of 2.60 eV and 3.19 eV, respectively. The amorphous CrSe2 thin films contained a wide range of exponential band distribution presented by Urbach energy width of 2.24 eV. In addition in contrast to the chemical bath deposition technique which produced Cr7Se8 films of low dielectric constant ( ), the TD technique revealed high dielectric constant values up to 11.9 for CrSe2 films. Moreover, the Drude-Lorentz modeling of the imaginary part of the dielectric constant spectra revealed drift mobility values in the range of 0.70–6.45 cm2/Vs. The plasmon frequency varied in the range of 5.42–8.33 GHz. Furthermore, analysis of the terahertz cutoff frequency ( ) spectra have shown that CrSe2 thin films exhibit values in the range of 3.30–40.0 THz. The features of CrSe2 thin films deposited by the thermal evaporation technique are promising semiconductor layers suitable for 6G and terahertz technology applications.en_US
dc.identifier.doi10.1007/s11082-023-05572-4en_US
dc.identifier.scopus2-s2.0-85175738134en_US
dc.identifier.startpage1254en_US
dc.identifier.urihttps://doi.org/10.1007/s11082-023-05572-4
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3994
dc.identifier.volume55en_US
dc.identifier.wosWOS:001096990300002en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherOptical and Quantum Electronicsen_US
dc.relation.ispartofOptical and Quantum Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCrSe2 Thin Filmsen_US
dc.subjectThermal Evaporation Techniqueen_US
dc.subjectOptical Terahertz Drude-Lorentzen_US
dc.titleGrowth and characterization of chromium selenide thin films for optoelectronic applicationsen_US
dc.typeArticleen_US

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