Selenium oxide based laser sensors designed for optoelectronic applications

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlharbi, Seham R. N.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAlgarni, Sabah E.
dc.date.accessioned2023-06-07T07:06:23Z
dc.date.available2023-06-07T07:06:23Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractIn this study, stacked layers of p? SeO2 and p? SiO2 were formed onto n? type silicon wafers to act as laser photosensors. The p? type stacked layers were fabricated using the thermal evaporation technique under a vacuum pressure of 10–5 mbar. Ag and Au thin films were used as Schottky contacts for p? SiO2 and n? Si, respectively. The energy band diagram of the device showed the presence of large conduction and valence band offsets that were sufficient for electron–hole separation. Practical tests using current–voltage characteristics indicated that in the dark, current transport was mostly dominated by diffusion and Richardson Schottky types of current conduction. These transport mechanisms led to a biasing-dependent rectification ratio, which increased by more than 149 times, 24 times, and ~?4 times under laser lights of wavelengths of 632 nm, 850 nm, and 1550 nm, respectively. The photosensors achieved high current responsivity (R˜ ) and external quantum efficiency (EQE %) reaching 0.54 A/W and 27.5%, respectively, under 632 nm-laser illuminations. The photosensors also showed acceptable values of R˜ and EQE % when irradiated with laser lights of wavelengths of 850 nm and 1550 nm. The proposed devices exhibited features such as a rectification ratio up to 104 and specific detectivity of ~?1010 Jones under laser light, making them suitable for wireless communication technology.en_US
dc.identifier.citationAlharbi, S.R.N., Qasrawi, A.F. & Algarni, S.E. Selenium oxide based laser sensors designed for optoelectronic applications. Opt Quant Electron 55, 677 (2023). https://doi.org/10.1007/s11082-023-05003-4en_US
dc.identifier.doi10.1007/s11082-023-05003-4en_US
dc.identifier.issue677en_US
dc.identifier.scopus2-s2.0-85161041377en_US
dc.identifier.urihttps://doi.org/10.1007/s11082-023-05003-4
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3926
dc.identifier.volume55en_US
dc.identifier.wosWOS:001001006600014en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofOptical and Quantum Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSi/SeO2 Photodetectorsen_US
dc.subjectVisible Light Communicationsen_US
dc.subjectEnhanced Responsivityen_US
dc.subjectWirelessen_US
dc.titleSelenium oxide based laser sensors designed for optoelectronic applicationsen_US
dc.typeArticleen_US

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