High-performance n – Si/p – SeO2 /p – SiO2 heterojunction photodetectors for potential application in visible light communication technology

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlharbi, Seham R. N.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAlgarni, Sabah E.
dc.date.accessioned2023-06-07T08:07:55Z
dc.date.available2023-06-07T08:07:55Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractPhotodetectors suitable for visible light communication (VLC) technology were fabricated and characterized in this study. The photodetectors were designed using two p-type stacked layers of SeO2 and SiO2, which were coated onto n? type Si thin wafers. These stacked layers were deposited in a vacuum medium under a pressure of 10–5 mbar using the thermal evaporation technique. p-SiO2 thin layer enriched the hole concentration of p-SeO2 layer forming p+n type heterojunction and prevented SeO2 from environmental contaminations. The microstructure, surface morphology, and photoelectrical properties of the n-Si/p-SeO2/p-SiO2 (SSS) detectors were explored. It was observed that the SSS detectors exhibited biasing and light power dependent asymmetry. The asymmetry varied in the range of 77–178 as the light power increased from zero to 77 mW. In addition, the SSS photodetectors demonstrated a current responsivity, external quantum efficiency, and specific detectivity reaching values of 123 mA/W, 15.6%, and 1.3?×?1010 Jones, respectively. These values are considered adequate for VLC technology. Practical tests have shown that the device can transmit wireless square-wave pulses with frequencies up to approximately 10–100 kHz. The growth and decay response times were found to be 1.15 ms and 0.89 ms, respectively. The features of the SSS detectors make them suitable for use as light-controlled current rectifiers and VLC detectors.en_US
dc.identifier.citationAlharbi, S.R.N., Qasrawi, A.F. & Algarni, S.E. High-performance n – Si/p – SeO2 /p – SiO2 heterojunction photodetectors for potential application in visible light communication technology. Appl. Phys. A 129, 464 (2023). https://doi.org/10.1007/s00339-023-06741-8en_US
dc.identifier.doi10.1007/s00339-023-06741-8en_US
dc.identifier.scopus2-s2.0-85161300700en_US
dc.identifier.startpage464en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-023-06741-8
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3927
dc.identifier.volume129en_US
dc.identifier.wosWOS:000999517200001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofApplied Physics A Materials Science and Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSi/SeO2 Photodetectorsen_US
dc.subjectVisible Light Communicationsen_US
dc.subjectEnhanced Responsivityen_US
dc.subjectWirelessen_US
dc.titleHigh-performance n – Si/p – SeO2 /p – SiO2 heterojunction photodetectors for potential application in visible light communication technologyen_US
dc.typeArticleen_US

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