Lead selenide thin films designed for laser sensing and visible light communications

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorKhusayfan, Najla M.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhanfar, Hazem K.
dc.contributor.authorAlharbi, Seham R.
dc.date.accessioned2023-07-05T07:48:55Z
dc.date.available2023-07-05T07:48:55Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein thin films of PbSe are coated onto amorphous glass, amorphous silicon (a?Si) and crystalline n?type Si (n?Si) wafers by the thermal evaporation technique under a vacuum pressure of 10? 5 mbar. The films are structurally, morphologically, compositionally, optically and electrically characterized. Strong effect of the nature (amorphous or crystalline) and type (Si or glass) of the substrate on the physical properties of lead selenide films is detected. Of these properties the crystallite sizes decreased and the microstrain, the stacking faults and defect density increased and the energy band gap is blue shifted when (a, n)-Si substrates replaces glass. In addition, the use of crystalline n?Si substrates instead of a?Si removed the free carrier absorption from a?Si/ p?PbSe improving the quantum efficiency of the devices. Opto-electronically, n?Si/p?PbSe films showed photosensor characteristics that suit both visible light and infrared technology applications. The photosensors displayed high current responsivity, external quantum efficiency percentages and response times reaching respective values of 1.4 A/W, 172% and 60 ?s. In addition, the n?Si/p?PbSe photosensors which were used as detectors to receive wireless light signals generated from light pulses of 10 kHz frequencies showed smart features nominating them as promising devices for laser sensing and visible light communication technology.en_US
dc.identifier.citationKhusayfan, N. M., Qasrawi, A. F., Khanfar, H. K., & Alharbi, S. R. (2023). Lead selenide thin films designed for laser sensing and visible light communications. Silicon, doi:10.1007/s12633-023-02554-9en_US
dc.identifier.doi10.1007/s12633-023-02554-9en_US
dc.identifier.scopus2-s2.0-85161995652en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1007/s12633-023-02554-9
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3935
dc.identifier.wosWOS:001007916200001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofSiliconen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSi/ p−PbSeen_US
dc.subjectVLC Technologyen_US
dc.subjectLaser Sensorsen_US
dc.subjectHigh Responsivityen_US
dc.subjectWireless Communicationsen_US
dc.titleLead selenide thin films designed for laser sensing and visible light communicationsen_US
dc.typeArticleen_US

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