SeO2 microwires designed as low temperature abrupt microelectronic switches, negative resistance and negative dielectric constant sources

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / CCW-9164-2022en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorGhannam, W. S.
dc.date.accessioned2022-11-25T06:43:40Z
dc.date.available2022-11-25T06:43:40Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstracterein, the structural, morphological, compositional, and electrical properties of SeO2 microwires are studied and analyzed. Microwires of SeO2 of dimensions of 460×30×30 (?m)3 are electrically characterized in the temperature range of 17-300 K. SeO2 microwires are observed exhibiting nano-crystalline structure relating to a tetragonal phase. The microwires contained excess oxygen leading to some Se vacancies. The current-voltage characteristics of the microwires displayed temperature dependent abrupt switching property revealing an “ON/OFF” current ratios of ?90 at threshold voltage of 0.48 V at 300 K. These features of the microwires remained down to 250 K. In addition, the temperature dependent electrical resistivity measurement showed that the microwires perform as a degenerate (metal like) semiconductors with quadratic temperature dependence (?(T)?T2). Moreover, impedance spectra analysis has shown that SeO2 microwires exhibit negative resistance and negative dielectric constant effects in the spectral ranges of 20-1800 MHz. The work here indicate that SeO2 microwires can perform much better than powders in pellets form or in thin film form. The resonance-antiresonance of dielectric constant and abrupt switching properties are accounted as remarkable features of the SeO2 microwires nominating them as abrupt electronic switches and signal amplifiers at workable in microelectronics.en_US
dc.identifier.citationQasrawi, A. F., & Ghannam, W. S. SeO2 microwires designed as low temperature abrupt microelectronic switches, negative resistance and negative dielectric constant sources. physica status solidi (a).en_US
dc.identifier.doi10.1002/pssa.202200200en_US
dc.identifier.scopus2-s2.0-85143283916en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1002/pssa.202200200
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3392
dc.identifier.wosWOS:000891666800001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherJohn Wiley & Sons, Ltden_US
dc.relation.ispartofPhysica Status Solidien_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSeo2 Microwiresen_US
dc.subjectX-Rayen_US
dc.subjectAbrupt Switchingen_US
dc.subjectNegative Conductanceen_US
dc.subjectNegative Capacitanceen_US
dc.titleSeO2 microwires designed as low temperature abrupt microelectronic switches, negative resistance and negative dielectric constant sourcesen_US
dc.typeArticleen_US

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