Copper doping effects on the optical and dielectric properties of amorphous indium selenide thin films

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAboalrub, Fatima M.
dc.date.accessioned2023-10-22T09:47:40Z
dc.date.available2023-10-22T09:47:40Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstract(a-InSe) thin films were doped with copper using the thermal evaporation technique under a vacuum pressure of 10– 5 mbar. The aim was to investigate the impact of Cu doping on the optical absorption, energy band gap, dielectric dispersion, optical conduction, and terahertz cutoff frequency. Notably, Cu doping levels of 1.41 at.% and 2.97 at.% in a-InSe resulted in a significant enhancement in light absorption by more than three and four times, respectively, without significantly altering the energy band gap. Furthermore, Cu doping led to a remarkable increase in the dielectric constant value and caused a redshift in the position of the dielectric resonance peak. Moreover, a noticeable enhancement in the optical conductivity and terahertz cutoff frequency values was observed in a-InSe films doped with 2.97 at.% of Cu. The Drude-Lorentz fittings of the optical conductivity data demonstrated that the presence of Cu atoms increased the scattering time at the femtosecond level and enhanced the drift mobility from ~ 5.0 cm2/ Vs for undoped films to ~ 113 cm2/ Vs for 2.97 at.% Cu-doped films. Additionally, the range of the terahertz cutoff limit expanded, covering a range of 0.1–16 THz. The study indicate that the features exhibited by Cu-doped InSe hold promise for various optoelectronic applications including terahertz technologyen_US
dc.identifier.citationQasrawi, A. F., & Aboalrub, F. M. (2023). Copper doping effects on the optical and dielectric properties of amorphous indium selenide thin films. Optical and Quantum Electronics, 55(12), 1044.en_US
dc.identifier.doi10.1007/s11082-023-05314-6en_US
dc.identifier.issn0306-8919en_US
dc.identifier.scopus2-s2.0-85171618882en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1044en_US
dc.identifier.urihttps://doi.org/10.1007/s11082-023-05314-6
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3986
dc.identifier.volume55en_US
dc.identifier.wosWOS:001075301600011en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofOptical and Quantum Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCu Doped InSeen_US
dc.subjectDielectric Dispersionen_US
dc.subjectOptical Conductivityen_US
dc.subjectOptical Propertiesen_US
dc.subjectTerhahertzen_US
dc.titleCopper doping effects on the optical and dielectric properties of amorphous indium selenide thin filmsen_US
dc.typeArticleen_US

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