Design and characterization of n -Si/p -CdO broken gap heterojunctions as high frequency PMOSFETs and microwave resonators

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorHarbi, Seham R.Al
dc.contributor.authorQasrawi, Atef Fayez
dc.date.accessioned2021-03-26T13:31:11Z
dc.date.available2021-03-26T13:31:11Z
dc.date.issued2021en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, p -type CdO thin films coated onto n -type Si crystals are employed to form metal oxide semiconductor field effect transistors (MOSFET). In the broken gap design, the valence band edge of Si substrates centered at 5.25 eV is aligned at conduction band edges of CdO centered at 5.20 eV. The construction of the energy band diagram indicated that the devices could reveal a deep built in potential of 4.68 eV. The device is fabricated by the thermal evaporation technique under vacuum pressure of 10-5 mbar. CdO thin films grown onto Si thin crystals form a randomly distributed nanorod-like grains of rod length and diameter of ~2.0 ?m and 160 nm, respectively. In addition, n -Si/p -CdO heterojunctions displayed typical diode characteristics with ideality factors of ~1.40 and barrier height of 0.67 eV. As passive mode devices, the C-V curves displayed enhanced PMOS channel with the ability of capacitance depletions in a wide range of frequency (10M-1.0 GHz). The depletion width of the device widens from 7.0 nm to 660 nm in that frequency domain. Moreover, the biased and unbiased impedance spectra analyses in the frequency domain of 1.0M-1.0 GHz, indicated the voltage controllability of the devices when operated as microwave cavities. The magnitude of the reflection coefficient spectra indicated the ability of using the MOSFET devices as high pass filters. The features of the n -Si/p-CdO heterojunctions nominate them for use as microwave band filters, PMOS field effect transistors and as frequency and voltage controlled tunable capacitorsen_US
dc.identifier.citationQasrawi, A., & Alharbi, S. (2021). Design and characterization of n-Si/p-CdO broken gap heterojunctions as high frequency PMOSFETs and microwave resonators.en_US
dc.identifier.doi10.1109/JSEN.2021.3065681en_US
dc.identifier.issn1530-437Xen_US
dc.identifier.scopus2-s2.0-85102712540en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1109/JSEN.2021.3065681
dc.identifier.urihttps://hdl.handle.net/20.500.12713/1635
dc.identifier.wosWOS:000664030600025en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.ispartofIEEE Sensors Journalen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBand Pass Filteren_US
dc.subjectCadmium Compoundsen_US
dc.subjectCrystalsen_US
dc.subjectFilmsen_US
dc.subjectHeterojunctionsen_US
dc.subjectII-VI Semiconductor Materialsen_US
dc.subjectImpedance Spectraen_US
dc.subjectPMOSFETen_US
dc.subjectSi/CdOen_US
dc.subjectSiliconen_US
dc.subjectSubstratesen_US
dc.titleDesign and characterization of n -Si/p -CdO broken gap heterojunctions as high frequency PMOSFETs and microwave resonatorsen_US
dc.typeArticleen_US

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