Electrical properties of amorphous Cu doped InSe thin films

dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAbuarra, Maryam Khalefa N.
dc.date.accessioned2023-09-12T12:56:15Z
dc.date.available2023-09-12T12:56:15Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractIn this study, we employed thermal evaporation under vacuum conditions to introduce copper dopants into amorphous InSe thin films. Our objective was to scrutinize the effects of varied copper doping concentrations on the structural, compositional, electrical, and photoelectrical properties of the films. Our observations indicated that copper doping did not induce discernible alterations in the amorphous morphology of the InSe films, yet it yielded notable enhancements in the material’s atomic stoichiometry. Notably, films subjected to both pristine conditions and 0.09 at. % copper doping exhibited extrinsic n-type conductivity behavior, while those doped with 0.42 at. % copper displayed a transition to p-type conductivity. Furthermore, our investigation encompassed electrical conductivity measurements conducted over a temperature range spanning from 100 to 320 K, elucidating the dominance of thermal excitation mechanisms at higher temperatures, and the prevalence of variable range hopping (VRH) processes at lower temperatures. The magnitude of copper dopants in the InSe matrix exerted discernible influence over impurity kinetics and VRH parameters, encompassing factors such as the degree of disorder, density of states proximate to the Fermi level, and average hopping distance. Additionally, our photoelectrical assessments unveiled that a nominal concentration of copper doping (0.09 at. %) yielded a remarkable augmentation of over 70% in the photoconductivity of the InSe films, underscoring its potential suitability for optoelectronic applications.en_US
dc.identifier.citationQasrawi, A.F., Abuarra, M.K.N. Electrical properties of amorphous Cu doped InSe thin films. Appl. Phys. A 129, 664 (2023). https://doi.org/10.1007/s00339-023-06955-wen_US
dc.identifier.doi10.1007/s00339-023-06955-wen_US
dc.identifier.issn0947-8396en_US
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-85169694729en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage664en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-023-06955-w
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3970
dc.identifier.volume129en_US
dc.identifier.wosWOS:001060247200005en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCu Doped InSeen_US
dc.subjectElectrical Propertiesen_US
dc.subjectVariable Range Hopingen_US
dc.subjectImpurity Photoconductivityen_US
dc.titleElectrical properties of amorphous Cu doped InSe thin filmsen_US
dc.typeArticleen_US

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