YB/SE/WO3/YB thin film transistors as rectifiers, 2 n-channel metal oxide semiconductor capacitors, 3 laser sensors, and microwave bandstop filters

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorDaragme, Rana B.
dc.date.accessioned2022-06-28T06:13:00Z
dc.date.available2022-06-28T06:13:00Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, Yb/p–Se/p–WO3/Yb heterojunctions are employed as multifunctional 6 devices. The devices which show back-to-back Schottky (BBS) diode character 7 istics are prepared by the thermal evaporation method under a vacuum pressure 8 of 10 5 mbar. The structural and morphological analyses on these heterojunc 9 tions have shown the growth of amorphous WO3 onto meshed nano/microwire 10 network of hexagonal selenium. The BBS diodes display voltage-controlled 11 current rectification ratios. In addition, the domination of the thermionic and 12 tunneling current conduction mechanisms in the transistors is computationally 13 investigated. Moreover, studies of the capacitance–voltage characteristic curves 14 demonstrate the performance of the devices as n-channel metal oxide semi 15 conductor (NMOS) field-effect transistors responsive in the frequency domain of 16 1.0–50.0 MHz. Furthermore, the impedance spectroscopy measurements in the 17 frequency domain of 0.01–1.80 GHz indicate the possibility of using the BBS 18 diodes as bandstop filters. The microwave cutoff frequency of these filters 19 reaches 1.06 GHz. On the other hand, when ohmic contacts are formed on the 20 glass/Se/WO3 part using two carbon electrodes, the active layer between the 21 electrodes displays high sensitivity to light irradiations from He–Ne lasers, 22 indicating the possibility of performing as photosensors.en_US
dc.identifier.citationA. F. Qasrawi Department of Electrical and Electronics Engineering Istinye University 34010 Istanbul, Turkey, YB/SE/WO3/YB thin film transistors as rectifiers, 2 n-channel metal oxide semiconductor capacitors, 3 laser sensors, and microwave bandstop filters, DOI: 10.1002/pssa.202100822en_US
dc.identifier.doi10.1002/pssa.202100822en_US
dc.identifier.issn1862-6300en_US
dc.identifier.scopus2-s2.0-85134033328en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttp://doi.org/10.1002/pssa.202100822
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2939
dc.identifier.wosWOS:000825271900001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherWileyen_US
dc.relation.ispartofPhysica Status Solid Aen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBand Filtersen_US
dc.subjectMicrowaveen_US
dc.subjectN-Channel Metal Oxide Semiconductor (NMOS)en_US
dc.subject14 Recti Fiersen_US
dc.subjectSe/WO 3en_US
dc.titleYB/SE/WO3/YB thin film transistors as rectifiers, 2 n-channel metal oxide semiconductor capacitors, 3 laser sensors, and microwave bandstop filtersen_US
dc.typeArticleen_US

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