Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlgarni, Sabah E.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhusayfan, Najla M.
dc.date.accessioned2022-11-24T09:36:21Z
dc.date.available2022-11-24T09:36:21Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractMagnesium selenide thin films are coated onto glass and semitransparent Ptsubstrates (nanosheets) by the vacuum evaporation technique under avacuum pressure of 10?5mbar. The effect of Pt nanosheets of thicknesses of100 nm on the structural, compositional, optical, and electrical properties ofMgSe is explored. It is found that platinum nanosheets enhance the lightabsorbability in the visible and infrared ranges of light. They slightly redshiftthe energy bandgap and decrease the dielectric constant. The stronginteraction between Pt and MgSe increases the electrical conductivity by fiveorders of magnitude. Pt forms shallow impurity levels in the energy bandgapof MgSe allowing the tunneling process at the Pt/MgSe interfaces. Practically,a Pt/MgSe/Pt tunneling type device is fabricated and tested by the microwaveimpedance spectroscopy technique. It is found that Pt/MgSe/Pt devices canexhibit resonance–antiresonance and negative capacitance effects which areimportant in electronic circuits as parasitic capacitance cancelers, signalamplifiers, and noise reducers. In addition, evaluation of the cutoff frequencyspectra has shown the ability of using the Pt/MgSe/Pt devices as microwaveresonators appropriate for 5G/6G technologies. A cutoff frequency larger than70 GHz can be achieved by imposing ac signal of amplitude of 0.10 V.en_US
dc.identifier.citationAlgarni, S. E., Qasrawi, A. F., Khusayfan, N. M., Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology. Cryst. Res. Technol. 2022, 2200185. https://doi.org/10.1002/crat.202200185en_US
dc.identifier.doi10.1002/crat.202200185en_US
dc.identifier.issn0232-1300en_US
dc.identifier.scopus2-s2.0-85142204777en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1002/crat.202200185
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3391
dc.identifier.wosWOS:000882955500001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherWileyen_US
dc.relation.ispartofCrystal Research and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleEnhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technologyen_US
dc.typeArticleen_US

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