Design and characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS field effect transistors, negative capacitance effect devices and band pass/reject filters suitable for 4G technologiet

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorDaragme, Rana B.
dc.date.accessioned2022-03-09T09:09:07Z
dc.date.available2022-03-09T09:09:07Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, the efect of Yb, Al, Cu and Au metal substrates on the electrical performance of germanium oxide-based devices is reported. Back-to-back Schottky-type metal-insulator-metal (MIM) electronic devices with the structure (Yb, Al, Cu, Au)/ GeO2/C are prepared by vacuum evaporation under a vacuum pressure of 10?5 mbar. Capacitance-voltage characteristic curve analysis on these devices have shown that, while the forward-biased Al/GeO2/C displays NMOS (enhanced N-channel metal oxide semiconductor) characteristics, Cu/GeO2/C and Au/GeO2/C show inverted NMOS and PMOS felds efect transistor (FET) characteristics under forward and reverse biasing conditions, respectively. A large scale (8–737 nm) of depletion width and built-in potentials engineering is possible via metallic substrate selection. In addition, current-voltage characteristic curve analysis have shown that the dominant transport mechanism is by electric feld-assisted tunneling through narrow barriers. The only device that showed current rectifcation was the Yb/GeO2/C device. The absence of the recertifcation property from the (Al, Cu, Au)/GeO2/C devices is assigned to the large surface roughness of the metal substrates. Analysis of the capacitance, conductance, impedance and refection coefcient spectra in the frequency domain of 0.01–1.80 GHz have shown that the proposed device structures can exhibit features of negative capacitance efect devices and tunable microwave/ radio wave cavities. The observed notch frequency values of the (Yb, Al, Cu, Au)/GeO2/C devices make them suitable for use as bandpass/reject flters suitable for 4G technologyen_US
dc.identifier.citationQasrawi, A. F., Daragme,Rana B. (2022). Design and characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS field effect transistors, negative capacitance effect devices and band pass/reject filters suitable for 4G technologies. Journal of Electronic Materials.en_US
dc.identifier.doi10.1007/s11664-022-09514-wen_US
dc.identifier.issn0361-5235en_US
dc.identifier.scopus2-s2.0-85125568399en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-022-09514-w
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2536
dc.identifier.wosWOS:000763883800005en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringer Linken_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGeO2en_US
dc.subjectField EffectTtransistoren_US
dc.subjectMetal Effecten_US
dc.subjectMOSFETen_US
dc.subjectMicrowave Filteren_US
dc.titleDesign and characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS field effect transistors, negative capacitance effect devices and band pass/reject filters suitable for 4G technologieten_US
dc.typeArticleen_US

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