Structural, optical and electrical properties of band-aligned CdBr2/Au/Ga2S3 interfaces and their application as band filters suitable for 5G technologies

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorA. Hamarsheh, Areen
dc.date.accessioned2022-04-25T08:27:21Z
dc.date.available2022-04-25T08:27:21Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, the structural, optical and electrical properties of band-aligned CdBr2/Ga2S3 interfaces in the presence and absence of Au nanosheets (10-20 nm) as interface spacers are reported. CdBr2/Au/Ga2S3 (CAG) stacked layers are grown by vacuum evaporation under a vacuum pressure of 10-5 mbar. It is observed that coating of amorphous Ga2S3 onto CdBr2 increases the crystallite size and decreases the microstrain, defect density and stacking faults in hexagonal CdBr2. Depositing Ga2S3 onto CdBr2 enhanced the light absorbability of Ga2S3 by more than 120 times. Insertion of Au nanosheets as spacers between the Ga2S3 and CdBr2 layers highly engineered the energy band gap of the CAG structure. In addition, the frequency-dependent capacitance, conductance and impedance spectroscopy analyses in the microwave frequency domain have shown the abil-ity of the CAG structure to reveal negative capacitance effect and the ability to behave as microwave resonators displaying controllable (by Au nanosheets) resonance-antiresonance phenomena. CAG bilayers showed microwave band pass/reject characteristics with tunable and multiband features. The microwave cutoff frequency at the notch frequency of the band filters are found to suitable for the 5G mobile technologies.en_US
dc.identifier.citationQasrawi, A.F., Hamarsheh, A.A., 2022. Structural, Optical and Electrical Properties of Band-Aligned CdBr2/Au/Ga2S3 Interfaces and Their Application As Band Filters Suitable for 5G Technologies. Journal of Electronic Materials.en_US
dc.identifier.doi10.1007/s11664-022-09616-5en_US
dc.identifier.scopus2-s2.0-85128621696en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1007/s11664-022-09616-5
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2646
dc.identifier.wosWOS:000787604400002en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCdBr2//Au/Ga2S3en_US
dc.subjectEnhanced light absorberen_US
dc.subjectBand filtersen_US
dc.subjectMicrowave resonatorsen_US
dc.titleStructural, optical and electrical properties of band-aligned CdBr2/Au/Ga2S3 interfaces and their application as band filters suitable for 5G technologiesen_US
dc.typeArticleen_US

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