Design and characterization of ZnSe/GeO2 heterojunctions as bandstop filters and negative capacitance devices

Basit Öğe Kaydı
dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorAlGarni, Sabah E.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhusayfan, Najla M.
dc.date.accessioned2021-03-10T08:57:54Z
dc.date.available2021-03-10T08:57:54Z
dc.date.issued2021en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as bandstop filters. The stacked layers of Au/ZnSe/GeO2 are coated under pressure of 10?5 mbar. The device is characterized by X-ray diffraction, X-ray photoelectron, X-ray fluorescence, and impedance spectroscopy techniques. It is observed that when the device is contacted with carbon point contacts, it exhibits resonance–antiresonance phenomena near 1.0 GHz. The Au/ZnSe/GeO2/C devices display negative capacitance effect in the frequency domain of 0.96–1.80 GHz. Analyses of the conductivity and capacitance spectra in the frequency domain of 0.01–1.80 GHz reveal the domination of conduction by quantum mechanical tunneling below 0.58 GHz and by the correlated barriers hopping above 0.58 GHz. In addition, characterizations of the impedance, reflection coefficient, return loss ((Formula presented.)) and voltage standing wave ratios ((Formula presented.)) spectra of the device indicated ideal bandstop filter features. The notch frequency of the filter is 1.56 GHz. At this critical frequency, the Au/ZnSe/GeO2/C devices display ideal characteristics presented by VSWR of 1.0, (Formula presented.) value of 28.9 dB. These features make the Au/ZnSe/GeO2/C heterojunction devices promising for use in telecommunication technology.en_US
dc.identifier.citationAlgarni, S. E., Qasrawi, A. F., & Khusayfan, N. M. (2021). Design and Characterization of ZnSe/GeO2 Heterojunctions as Band Stop Filters and Negative Capacitance Devices. physica status solidi (a).en_US
dc.identifier.doi10.1002/pssa.202000830en_US
dc.identifier.issn1862-6300en_US
dc.identifier.scopus2-s2.0-85101633488en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1002/pssa.202000830
dc.identifier.urihttps://hdl.handle.net/20.500.12713/1542
dc.identifier.wosWOS:000621806400001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherWiley-VCH Verlagen_US
dc.relation.ispartofPhysica Status Solidi (A) Applications and Materials Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBand Diagramsen_US
dc.subjectBandstop Filtersen_US
dc.subjectMicrowave Cavitiesen_US
dc.subjectZnSe/GeO2en_US
dc.titleDesign and characterization of ZnSe/GeO2 heterojunctions as bandstop filters and negative capacitance devicesen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
9.pdf
Boyut:
1.47 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Scopus İndeksli Yayınlar Koleksiyonu
Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu